Structural and Electrical Investigations of Ferroelectric Lead Strontium Titanate Thin Films and Ceramics

2003 ◽  
Vol 784 ◽  
Author(s):  
M. Jain ◽  
P. Bhattacharya ◽  
Yu. I. Yuzyuk ◽  
R. S. Katiyar ◽  
A. S. Bhalla

ABSTRACTLead strontium titanate (PbxSr1-xTiO3) (x=0.3–1.0) ceramic targets were prepared by the conventional powder-processing method. Thin films of these compositions were deposited on platinized silicon substrates by pulsed laser deposition technique. X-ray diffraction studies of the ceramic targets showed that the lattice structure changes from tetragonal to cubic phase with the increase of Sr content in PbTiO3. Raman spectroscopic studies of PbxSr1-xTiO3(PST) ceramics and thin films showed that the soft mode decreases to lower frequency and finally disappear at around 60–70 at% Sr content, which confirms the tetragonal to cubic phase transition at room temperature. Dielectric constant measured for PST thin films was in the range of 900–1500 at 1 MHz, with maximum value obtained for PST30 thin film. The loss tangents at room temperature were in the range of 0.07–0.1 for PST thin films with different compositions.

Author(s):  
M. Grant Norton ◽  
Gerald R. English ◽  
Christopher Scarfone ◽  
C. Barry Carter

Barium titanate (BaTiO3) may be used in a number of thin-film applications in electronic and optoelectronic devices. For these devices the formation of epitactic films of the correct stoichiometry and phase is essential. In particular, the tetragonal form of BaTiO3, which is stable at room temperature, exhibits ferro-, pyro- and piezoelectric properties. It is desirable to form films of the tetragonal phase directly and thus to avoid formation of either amorphous or polycrystalline material or to form material of the non-ferroelectric cubic phase. Recently two techniques, pulsed-laser ablation and reactive evaporation, have been used to form BaTiO3 thin-films. In the present study BaTiO3 thin-films have been formed using the pulsed-laser ablation technique. Pulsed-laser ablation is now widely used to produce thin-films of the high temperature superconductors and has many advantages over other techniques, in particular the formation of films which maintain the stoichiometry of the target material and by controlling the processing conditions the formation of films having defined crystalline phases.


2002 ◽  
Vol 147 (1-2) ◽  
pp. 129-133 ◽  
Author(s):  
Se-Hee Lee ◽  
Maeng Je Seong ◽  
C.Edwin Tracy ◽  
Angelo Mascarenhas ◽  
J.Roland Pitts ◽  
...  

2007 ◽  
Vol 91 (4) ◽  
pp. 042908 ◽  
Author(s):  
Y. S. Kim ◽  
D. J. Kim ◽  
T. H. Kim ◽  
T. W. Noh ◽  
J. S. Choi ◽  
...  

2018 ◽  
Vol 444 ◽  
pp. 71-74 ◽  
Author(s):  
Yuhei Shimizu ◽  
Kazuhiko Tonooka ◽  
Yoshiyuki Yoshida ◽  
Mitsuho Furuse ◽  
Hiroshi Takashima

2007 ◽  
Vol 280-283 ◽  
pp. 1909-1912 ◽  
Author(s):  
Can Wang ◽  
Bo Lin Cheng ◽  
S.Y. Wang ◽  
S.Y. Dai ◽  
Zhao Hui Chen

Compositional graded thin films of (Ba0.8Sr0.2)(Ti1-xZrx)O3 (BSTZ) are grown on MgO by pulsed laser deposition technique with four BSTZ ceramic targets. Gradients of composition are achieved by artificially tailoring composition in multilayered thin films to form compositional graded layers (CGL). In each CGL four individual layers of BSTZ with x = 0.36, 0.18, 0.08 and 0 are grown^in series with equal thickness. Three kinds of CGL samples comprising one, two or four CGLs have been elaborated with the same total thickness by varying the thickness of each CGL. Raman spectra show existence of tetragonal structure in all the multilayered BSTZ thin films. Raman peak at 535 cm-1 shifts to high frequency with increasing of compositional gradient, and the peak at 750 cm-1 also shows a small shift to high frequency. Moreover, other Raman peak is observed at about 830 cm-1, which is associated with phonon mode of cubic phase, and such peak shifts towards lower frequency with increasing of compositional gradient. The shift of Raman peak is related to variation of internal stress in BSTZ thin film due to increasing compositional gradient.


2005 ◽  
Vol 891 ◽  
Author(s):  
Kousik Samanta ◽  
Pijush Bhattacharya ◽  
Ram S. Katiyar ◽  
W. Iwamoto ◽  
R. R. Urbano ◽  
...  

ABSTRACTThin films of Co substituted ZnO and ZnCo2O4 were deposited on c-axis (0001) oriented Al2O3 substrates using pulsed laser deposition. The XRD results showed all the films were highly (002) oriented with a less intense peak of (311) for ZnCo2O4 thin film. Micro-Raman spectra of ceramic targets showed the modes related to wurtzite ZnO and spinel ZnCo2O4 structures. In thin films of Zn1−xCoxO no modes corresponding to ZnCo2O4 were detected. The intensity of E1(LO) and multiphonon peak at 584 and 540 cm−1 respectively, increased with increase in Co substitution. The optical absorption of the films showed that the band gap decreased with increase of Co concentrations at room temperature along with the sub-bandgap absorptions due to d-d transitions of Co2+. Similar sub-bandgap d-d transition was also observed in the absorption spectra ZnCo2O4 thin films. The highest saturated magnetization (0.2μB/Co) was obtained for 5%Co substituted ZnO.


2008 ◽  
Vol 1101 ◽  
Author(s):  
Jesse Frantz ◽  
Jasbinder S. Sanghera ◽  
Syed B. Qadri ◽  
Ishwar D. Aggarwal

AbstractBarium copper sulfur fluoride thin films with a face-centered cubic phase in the Fm3m space group were synthesized via RF magnetron sputtering. The results of a detailed optical and electronic characterization of the films are presented. As-deposited, they exhibit degenerate p-type conductivity at room temperature of approximately 260 S/cm – higher than that of any previously reported p-TC. Their conductivity after post-deposition processing increases to as high as 800 S/cm. The films exhibit bandgaps ranging from 1.45-1.75 eV. They are typically deposited with a substrate temperature between room temperature and 100°C, making them suitable for deposition on plastic as well as glass or crystalline substrates. It was found that a silica protective layer reduces degradation in film transparency that is caused by exposure to air.


2010 ◽  
Vol 30 (2) ◽  
pp. 465-470 ◽  
Author(s):  
D. Czekaj ◽  
A. Lisińska-Czekaj ◽  
T. Orkisz ◽  
J. Orkisz ◽  
G. Smalarz

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