Visualization of photoassisted polarization switching and its consequences in BiFeO3 thin films probed by terahertz radiation

2007 ◽  
Vol 91 (3) ◽  
pp. 031909 ◽  
Author(s):  
D. S. Rana ◽  
K. Takahashi ◽  
K. R. Mavani ◽  
I. Kawayama ◽  
H. Murakami ◽  
...  
2015 ◽  
Vol 51 (5) ◽  
pp. 2283-2291 ◽  
Author(s):  
G. Rojas-George ◽  
A. Concha-Balderrama ◽  
H. Esparza-Ponce ◽  
J. Silva ◽  
J. T. Elizalde Galindo ◽  
...  

Nanoscale ◽  
2021 ◽  
Author(s):  
Jing Wang ◽  
Huayu Yang ◽  
Yue Wang ◽  
Yuanyuan Fan ◽  
Di Liu ◽  
...  

We investigate the polarization-switching pathway dependent electrical transport behaviors in rhombohedral-phase BiFeO3 thin films with a point contact geometry. By combining conducting-atomic force microscopy and piezoelectric force microscopy, we simultaneously...


2009 ◽  
Vol 95 (24) ◽  
pp. 242902 ◽  
Author(s):  
Sangwoo Ryu ◽  
Jong Yeog Son ◽  
Young-Han Shin ◽  
Hyun M. Jang ◽  
James F. Scott

2019 ◽  
Author(s):  
D.O. Alikin ◽  
Y. Fomichov ◽  
S.P. Reis ◽  
A.S. Abramov ◽  
D.S. Chezganov ◽  
...  

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.


2014 ◽  
Vol 25 (7) ◽  
pp. 2998-3002 ◽  
Author(s):  
Huiqin Li ◽  
Jingsong Liu ◽  
Qilong Liao ◽  
Wanli Zhang ◽  
Shuren Zhang

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