Observation of photoassisted polarization switching in BiFeO3 thin films probed by terahertz radiation

2007 ◽  
Vol 90 (5) ◽  
pp. 052908 ◽  
Author(s):  
Kouhei Takahashi ◽  
Masayoshi Tonouchi
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Polarization Switching ◽  
Bifeo3 Thin Films

Visualization of photoassisted polarization switching and its consequences in BiFeO3 thin films probed by terahertz radiation

2007 ◽  
Vol 91 (3) ◽  
pp. 031909 ◽  
Author(s):  
D. S. Rana ◽  
K. Takahashi ◽  
K. R. Mavani ◽  
I. Kawayama ◽  
H. Murakami ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Polarization Switching ◽  
Bifeo3 Thin Films

Local polarization switching in Ba–Ni co-doped BiFeO3 thin films with low rhombohedral-symmetry distortion

2015 ◽  
Vol 51 (5) ◽  
pp. 2283-2291 ◽  
Author(s):  
G. Rojas-George ◽  
A. Concha-Balderrama ◽  
H. Esparza-Ponce ◽  
J. Silva ◽  
J. T. Elizalde Galindo ◽  
...  
Keyword(s):  
Thin Films ◽  
Polarization Switching ◽  
Bifeo3 Thin Films ◽  
Local Polarization ◽  
Rhombohedral Symmetry ◽  
Co Doped

Polarization-switching pathway determined electrical transport behaviors in rhombohedral BiFeO3 thin films

Nanoscale ◽  
2021 ◽  
Author(s):  
Jing Wang ◽  
Huayu Yang ◽  
Yue Wang ◽  
Yuanyuan Fan ◽  
Di Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Electrical Transport ◽  
Point Contact ◽  
Rhombohedral Phase ◽  
Polarization Switching ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bifeo3 Thin Films ◽  
Piezoelectric Force Microscopy

We investigate the polarization-switching pathway dependent electrical transport behaviors in rhombohedral-phase BiFeO3 thin films with a point contact geometry. By combining conducting-atomic force microscopy and piezoelectric force microscopy, we simultaneously...

scholarly journals Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature

2009 ◽  
Vol 95 (24) ◽  
pp. 242902 ◽  
Author(s):  
Sangwoo Ryu ◽  
Jong Yeog Son ◽  
Young-Han Shin ◽  
Hyun M. Jang ◽  
James F. Scott
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Polarization Switching ◽  
Bifeo3 Thin Films ◽  
Switching Characteristics

Piezoelectric Response and Polarization-Dependent Conductivity of Grain Boundaries in BiFeO3 Thin Films

2019 ◽  
Author(s):  
D.O. Alikin ◽  
Y. Fomichov ◽  
S.P. Reis ◽  
A.S. Abramov ◽  
D.S. Chezganov ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Piezoelectric Response ◽  
Bifeo3 Thin Films

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

Domain structure and leakage mechanism of BiFeO3 thin films deposited at different temperatures

2014 ◽  
Vol 25 (7) ◽  
pp. 2998-3002 ◽  
Author(s):  
Huiqin Li ◽  
Jingsong Liu ◽  
Qilong Liao ◽  
Wanli Zhang ◽  
Shuren Zhang
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Bifeo3 Thin Films ◽  
Leakage Mechanism ◽  
Different Temperatures
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