scholarly journals Polarization of light emission by 460nm GaInN∕GaN light-emitting diodes grown on (0001) oriented sapphire substrates

2007 ◽  
Vol 91 (5) ◽  
pp. 051117 ◽  
Author(s):  
Martin F. Schubert ◽  
Sameer Chhajed ◽  
Jong Kyu Kim ◽  
E. Fred Schubert ◽  
Jaehee Cho
Keyword(s):  
Light Emitting Diodes ◽  
Light Emission ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Polarization Of Light

scholarly journals Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Initial Growth ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

Light Emission Characteristics and Mechanics of Foldable Inorganic Light-Emitting Diodes

2010 ◽  
Vol 22 (28) ◽  
pp. 3062-3066 ◽  
Author(s):  
Sang-Il Park ◽  
An-Phong Le ◽  
Jian Wu ◽  
Yonggang Huang ◽  
Xiuling Li ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emission ◽  
Emission Characteristics ◽  
Light Emitting

Enhanced electrical performance by modulation-doping in AlGaN-based deep ultraviolet light-emitting diodes

2019 ◽  
Vol 33 (08) ◽  
pp. 1950088
Author(s):  
Sipan Yang ◽  
Miao He ◽  
Jianchang Yan ◽  
Kunhua Wen ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Electrical Performance ◽  
Algan Layer ◽  
Modulation Doping ◽  
Light Emitting ◽  
Growth Method ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Through the silicon modulation-doping (MD) growth method, the electrical performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) is improved by replacing the commonly uniform-doped (UD) method of n-AlGaN layer. The electroluminescence characterisic measurements demonstrate the MD growth method could effectively enhance the light emission intensity. Both the forward voltage and reverse leakage current of the MD samples are obviously reduced compared to those of the UD sample. Due to the existence of periodic Si-MD superlattices in n-AlGaN layers, which may behave like a series of capacitors, the built-in electric fields are formed. Both the measured capacitance–voltage (C–V) characteristics, and related photoluminescence (PL) intensity with the Si-MD growth method are enhanced. In detail, the effects of these capacitors can enhance the peak internal capacitance up to 370 pF in the MD sample, whereas the UD sample is only 180 pF. The results also mean that with better current spreading ability in the MD sample, the MD processes can effectively enhance the efficiency and reliability of DUV-LEDs. Thus, the investigations of the Si-MD growth methods may be useful for improving the electrical performance of DUV-LEDs in future works. Meanwhile, this investigation may partly suggest the minor crystalline quality improvements in the epi-layers succeeding the MD n-AlGaN layer.

scholarly journals Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching

2010 ◽  
Vol 18 (9) ◽  
pp. 9728 ◽  
Author(s):  
Younghun Jung ◽  
Jihyun Kim ◽  
Soohwan Jang ◽  
Kwang Hyeon Baik ◽  
Yong Gon Seo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Wet Etching ◽  
Light Extraction ◽  
Light Emitting ◽  
Sapphire Substrates

White Light Emission of Monolithic Carbon-Implanted InGaN–GaN Light-Emitting Diodes

2006 ◽  
Vol 18 (19) ◽  
pp. 2029-2031 ◽  
Author(s):  
C.-T. Lee ◽  
U.-Z. Yang ◽  
C.-S. Lee ◽  
P.-S. Chen
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
White Light Emission ◽  
Light Emitting
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