Light Emission Characteristics and Mechanics of Foldable Inorganic Light-Emitting Diodes

2010 ◽  
Vol 22 (28) ◽  
pp. 3062-3066 ◽  
Author(s):  
Sang-Il Park ◽  
An-Phong Le ◽  
Jian Wu ◽  
Yonggang Huang ◽  
Xiuling Li ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emission ◽  
Emission Characteristics ◽  
Light Emitting

Aggregation-enhanced emission active tetraphenylbenzene-cored efficient blue light emitter

2017 ◽  
Vol 196 ◽  
pp. 245-253 ◽  
Author(s):  
Lingzhi Li ◽  
Han Nie ◽  
Ming Chen ◽  
Jingzhi Sun ◽  
Anjun Qin ◽  
...  
Keyword(s):  
Blue Light ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Organic Light Emitting Diodes ◽  
Emission Characteristics ◽  
Blue Light Emission ◽  
Light Emitting ◽  
Light Emitter ◽  
Organic Light

A tetraphenylbenzene (TPB) cored luminophore of TPB-AC with aggregation-enhanced emission characteristics was designed and synthesized. TPB-AC could be potentially applied for the fabrication of high performance organic light-emitting diodes (OLEDs) with blue light emission.

Influence of the quantum-well shape on the light emission characteristics of InGaN/GaN quantum-well structures and light-emitting diodes

2002 ◽  
Vol 81 (19) ◽  
pp. 3552-3554 ◽  
Author(s):  
H. W. Shim ◽  
R. J. Choi ◽  
S. M. Jeong ◽  
Le Van Vinh ◽  
C.-H. Hong ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Emission Characteristics ◽  
Light Emitting ◽  
Quantum Well Structures

Enhanced electrical performance by modulation-doping in AlGaN-based deep ultraviolet light-emitting diodes

2019 ◽  
Vol 33 (08) ◽  
pp. 1950088
Author(s):  
Sipan Yang ◽  
Miao He ◽  
Jianchang Yan ◽  
Kunhua Wen ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Electrical Performance ◽  
Algan Layer ◽  
Modulation Doping ◽  
Light Emitting ◽  
Growth Method ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Through the silicon modulation-doping (MD) growth method, the electrical performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) is improved by replacing the commonly uniform-doped (UD) method of n-AlGaN layer. The electroluminescence characterisic measurements demonstrate the MD growth method could effectively enhance the light emission intensity. Both the forward voltage and reverse leakage current of the MD samples are obviously reduced compared to those of the UD sample. Due to the existence of periodic Si-MD superlattices in n-AlGaN layers, which may behave like a series of capacitors, the built-in electric fields are formed. Both the measured capacitance–voltage (C–V) characteristics, and related photoluminescence (PL) intensity with the Si-MD growth method are enhanced. In detail, the effects of these capacitors can enhance the peak internal capacitance up to 370 pF in the MD sample, whereas the UD sample is only 180 pF. The results also mean that with better current spreading ability in the MD sample, the MD processes can effectively enhance the efficiency and reliability of DUV-LEDs. Thus, the investigations of the Si-MD growth methods may be useful for improving the electrical performance of DUV-LEDs in future works. Meanwhile, this investigation may partly suggest the minor crystalline quality improvements in the epi-layers succeeding the MD n-AlGaN layer.

scholarly journals Polarization of light emission by 460nm GaInN∕GaN light-emitting diodes grown on (0001) oriented sapphire substrates

2007 ◽  
Vol 91 (5) ◽  
pp. 051117 ◽  
Author(s):  
Martin F. Schubert ◽  
Sameer Chhajed ◽  
Jong Kyu Kim ◽  
E. Fred Schubert ◽  
Jaehee Cho
Keyword(s):  
Light Emitting Diodes ◽  
Light Emission ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Polarization Of Light
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