Effect of intrinsic stress from a nanoscale high-dielectric constant gate oxide on strain in a transistor channel

2007 ◽  
Vol 91 (1) ◽  
pp. 012106 ◽  
Author(s):  
Hongtao Wang ◽  
Shriram Ramanathan
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Gate Oxide ◽  
Intrinsic Stress ◽  
Transistor Channel ◽  
High Dielectric

scholarly journals Defect energy levels in HfO2 high-dielectric-constant gate oxide

2005 ◽  
Vol 87 (18) ◽  
pp. 183505 ◽  
Author(s):  
K. Xiong ◽  
J. Robertson ◽  
M. C. Gibson ◽  
S. J. Clark
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Energy Levels ◽  
Gate Oxide ◽  
Defect Energy ◽  
High Dielectric

scholarly journals Defect states in the high-dielectric-constant gate oxide LaAlO3

2006 ◽  
Vol 89 (2) ◽  
pp. 022907 ◽  
Author(s):  
K. Xiong ◽  
J. Robertson ◽  
S. J. Clark
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Gate Oxide ◽  
Defect States ◽  
High Dielectric

Defect states in the high-dielectric-constant gate oxide HfSiO4

2007 ◽  
Vol 101 (2) ◽  
pp. 024101 ◽  
Author(s):  
K. Xiong ◽  
Y. Du ◽  
K. Tse ◽  
J. Robertson
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Gate Oxide ◽  
Defect States ◽  
High Dielectric

Enhanced performance of supercapacitors by constructing a “mini parallel-plate capacitor” in an electrode with high dielectric constant materials

2020 ◽  
Vol 8 (32) ◽  
pp. 16661-16668
Author(s):  
Huayao Tu ◽  
Shouzhi Wang ◽  
Hehe Jiang ◽  
Zhenyan Liang ◽  
Dong Shi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Carbon Fiber ◽  
Parallel Plate ◽  
Sandwich Structure ◽  
High Dielectric Constant ◽  
Parallel Plate Capacitor ◽  
Plate Capacitor ◽  
Fiber Metal ◽  
High Dielectric ◽  
Mini Plate

The carbon fiber/metal oxide/metal oxynitride layer sandwich structure is constructed in the electrode to form a mini-plate capacitor. High dielectric constant metal oxides act as dielectric to increase their capacitance.

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