scholarly journals Defect energy levels in HfO2 high-dielectric-constant gate oxide

2005 ◽  
Vol 87 (18) ◽  
pp. 183505 ◽  
Author(s):  
K. Xiong ◽  
J. Robertson ◽  
M. C. Gibson ◽  
S. J. Clark
2006 ◽  
Vol 89 (2) ◽  
pp. 022907 ◽  
Author(s):  
K. Xiong ◽  
J. Robertson ◽  
S. J. Clark

2007 ◽  
Vol 101 (2) ◽  
pp. 024101 ◽  
Author(s):  
K. Xiong ◽  
Y. Du ◽  
K. Tse ◽  
J. Robertson

2020 ◽  
Vol 8 (32) ◽  
pp. 16661-16668
Author(s):  
Huayao Tu ◽  
Shouzhi Wang ◽  
Hehe Jiang ◽  
Zhenyan Liang ◽  
Dong Shi ◽  
...  

The carbon fiber/metal oxide/metal oxynitride layer sandwich structure is constructed in the electrode to form a mini-plate capacitor. High dielectric constant metal oxides act as dielectric to increase their capacitance.


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