scholarly journals Mg acceptor level in InN epilayers probed by photoluminescence

2007 ◽  
Vol 91 (1) ◽  
pp. 012101 ◽  
Author(s):  
N. Khan ◽  
N. Nepal ◽  
A. Sedhain ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Acceptor Level

Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
S.G. Gasan-Zade ◽  
M.V. Strikha ◽  
G.A. Shepelskii
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Strong Electric Field ◽  
Radiative Transition ◽  
Hot Electrons ◽  
Acceptor Level ◽  
Threshold Values ◽  
Red Emission ◽  
V Band ◽  
Infra Red

AbstractThe intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg1−xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5–2.7 kbar, E = 50–55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4–6 times) occur.

The acceptor level of vanadium in III–V compounds

1985 ◽  
Vol 58 (11) ◽  
pp. 4207-4215 ◽  
Author(s):  
B. Clerjaud ◽  
C. Naud ◽  
B. Deveaud ◽  
B. Lambert ◽  
B. Plot ◽  
...  
Keyword(s):  
Acceptor Level

EL2-Induced Upconversion Luminescence In GaAs

1996 ◽  
Vol 442 ◽  
Author(s):  
V. Alex ◽  
T. Iino
Keyword(s):  
Band Gap ◽  
Upconversion Luminescence ◽  
Hot Electrons ◽  
Complete Disappearance ◽  
Acceptor Level ◽  
Acceptor Pair ◽  
Step Process ◽  
Regeneration Mechanism ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

AbstractNear band gap luminescence in bulk-grown semi-insulating GaAs is excited in a two step process via the EL2 defect. While the conventionally excited photoluminescence of our samples is dominated by conduction band to acceptor transitions, the upconversion process selectively excites donor acceptor pair transitions. Illumination near the maximum of the EL2- photoquenching band at 1064 nm leads to a complete disappearance of the so called upconversion photoluminescence (UPL). Excitation with light of shorter wavelengths however only partially quenches the UPL. Excitation between 850nm and 900nm completely regenerates the UPL. The characteristic photorecovery transients of the UPL are described by the EL2 regeneration mechanism via the population of the acceptor level of the metastable EL2 by hot electrons. The recovery of the EL2 by simultaneous illumination with above and below band gap light enables the observation of UPL at wavelengths, where the EL2-defect would otherwise be rapidly quenched. Under these conditions we observe a remarkable increase of the UPL-efficiency.

Acceptor level of nitrogen in diamond and the 270-nm absorption band

2009 ◽  
Vol 80 (3) ◽  
Author(s):  
R. Jones ◽  
J. P. Goss ◽  
P. R. Briddon
Keyword(s):  
Absorption Band ◽  
Acceptor Level

Laser-Doped SiC as Wireless Remote Gas Sensor Based on Semiconductor Optics

2012 ◽  
Vol 717-720 ◽  
pp. 1195-1198
Author(s):  
Geunsik Lim ◽  
Tariq Manzur ◽  
Aravinda Kar
Keyword(s):  
Valence Band ◽  
Energy Gap ◽  
Gas Sensing ◽  
Optical Signal ◽  
Acceptor Level ◽  
Spectral Bands ◽  
Sensing Applications ◽  
Electro Optic ◽  
Midwave Infrared ◽  
P Type

An uncooled SiC-based electro-optic device is developed for gas sensing applications. P-type dopants Ga, Sc, P and Al are incorporated into an n-type crystalline 6H-SiC substrate by a laser doping technique for sensing CO2, CO, NO2 and NO gases, respectively. Each dopant creates an acceptor energy level within the bandgap of the substrate so that the energy gap between this acceptor level and the valence band matches the quantum of energy emitted by the gas of interest. The photons of the gas excite electrons from the valence band to the acceptor level, which alters the electron density in these two states. Consequently, the refractive index of the substrate changes, which, in turn, modifies the reflectivity of the substrate. This change in reflectivity represents the optical signal of the sensor, which is probed remotely with a laser such as a helium-neon laser. Although the midwave infrared (3-5 mm) band is studied in this paper, the approach is applicable to other spectral bands.

Characterization of the Mn acceptor level in GaAs

1988 ◽  
Vol 64 (3) ◽  
pp. 1564-1567 ◽  
Author(s):  
L. Montelius ◽  
S. Nilsson ◽  
L. Samuelson ◽  
E. Janzén ◽  
M. Ahlström
Keyword(s):  
Acceptor Level

Evidence for a substitutional Mg acceptor level in silicon

1988 ◽  
Vol 38 (15) ◽  
pp. 10483-10489 ◽  
Author(s):  
N. Baber ◽  
L. Montelius ◽  
M. Kleverman ◽  
K. Bergman ◽  
H. G. Grimmeiss
Keyword(s):  
Acceptor Level
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