Heating-induced carrier accumulation in the optical confinement layer and the output power in broadened symmetric and narrow asymmetric waveguide laser diodes

2007 ◽  
Vol 101 (12) ◽  
pp. 123115 ◽  
Author(s):  
Boris Ryvkin ◽  
Eugene Avrutin
Keyword(s):  
Output Power ◽  
Laser Diodes ◽  
Waveguide Laser ◽  
Optical Confinement

4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

1997 ◽  
Vol 70 (22) ◽  
pp. 2931-2933 ◽  
Author(s):  
D. Z. Garbuzov ◽  
R. U. Martinelli ◽  
H. Lee ◽  
R. J. Menna ◽  
P. K. York ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Waveguide Laser ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Continuous Wave Output Power

1.5 [micro sign]m wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power

1996 ◽  
Vol 32 (18) ◽  
pp. 1717 ◽  
Author(s):  
D. Garbuzov ◽  
L. Xu ◽  
S.R. Forrest ◽  
R. Menna ◽  
R. Martinelli ◽  
...  
Keyword(s):  
Output Power ◽  
Laser Diodes ◽  
Waveguide Laser ◽  
High Output Power ◽  
Internal Loss ◽  
High Output

Measurement of optical loss variation on thickness of InGaN optical confinement layers of blue-violet-emitting laser diodes

2008 ◽  
Vol 103 (10) ◽  
pp. 103101 ◽  
Author(s):  
J. K. Son ◽  
S. N. Lee ◽  
H. S. Paek ◽  
T. Sakong ◽  
H. K. Kim ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Optical Loss ◽  
Optical Confinement
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