Measurement of optical loss variation on thickness of InGaN optical confinement layers of blue-violet-emitting laser diodes

2008 ◽  
Vol 103 (10) ◽  
pp. 103101 ◽  
Author(s):  
J. K. Son ◽  
S. N. Lee ◽  
H. S. Paek ◽  
T. Sakong ◽  
H. K. Kim ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Optical Loss ◽  
Optical Confinement

High Frequency Confinement Factor Modulation of Diode Lasers

1997 ◽  
Vol 08 (03) ◽  
pp. 547-574 ◽  
Author(s):  
S. A. Gurevich ◽  
M. S. Shatalov ◽  
G. S. Simin
Keyword(s):  
High Frequency ◽  
Laser Diodes ◽  
Rate Equations ◽  
Lateral Part ◽  
Optical Confinement ◽  
Initial Experiment ◽  
External Voltage ◽  
Fabry Perot ◽  
High Bit Rates ◽  
Advanced Model

In this paper we discuss the possibility of confinement factor and dual (confinement & pumping current) modulation of laser diodes. In the initial experiment, four-terminal Fabry–Pérot lasers of ridge guide type with two additional side electrodes were tested. The possibility of controlling the lateral part of the optical confinement factor by applying an external voltage to the side contacts was proved in this experiment. To analyze the dynamic behavior of the four-terminal laser under confinement factor and dual modulation, a simple model and a more accurate new model were developed, the last one based on the simultaneous solution of laser rate equations and matrix equation relating potentials and currents. The simulations carried out on the basis of the advanced model allowed us to propose an optimized four-terminal laser structure promising enhanced performance under dual modulation. It is shown that dual modulation may result in very efficient correction of output waveforms which leads to a much better opening of transmitted eye patterns at high bit rates as compared to direct modulation.

Mechanisms of optical confinement in semiconductor laser diodes and laser arrays

1996 ◽  
Author(s):  
Viktor P. Chaly ◽  
Dimitry M. Demidov ◽  
Sergey Y. Karpov ◽  
Alexander L. Ter-Martirosyan ◽  
D. V. Titov
Keyword(s):  
Semiconductor Laser ◽  
Laser Diodes ◽  
Optical Confinement ◽  
Laser Arrays ◽  
Semiconductor Laser Diodes

INFLUENCE OF WAVEGUIDE LAYERS ON DEEP VIOLET InGaN DQW LASERS PERFORMANCE

2015 ◽  
Vol 22 (04) ◽  
pp. 1550051
Author(s):  
GH. ALAHYARIZADEH ◽  
M. AMIRHOSEINY ◽  
Z. HASSAN
Keyword(s):  
Slope Efficiency ◽  
Light Emission ◽  
Diode Lasers ◽  
Laser Diodes ◽  
Threshold Current ◽  
Waveguide Structure ◽  
Optical And Electrical Properties ◽  
Optical Intensity ◽  
Optical Confinement ◽  
Current Output

This paper focuses on the performance characteristics of laser diodes (LDs) to improve output light emission properties. The optical and electrical properties such as threshold current, output power, slope efficiency, differential quantum efficiency, optical intensity and optical confinement factor has been compared for diode lasers with different waveguide structures. The waveguide structures which were analyzed in this research were a basic GaN waveguide structure, an InGaN waveguide structure, and AlInGaN waveguide structure. In addition the effects of Indium concentration and the thickness of the top and down waveguide layers have been studied. The InGaN waveguide layer, which has a higher concentration of Indium, appears to increase the OCF. The increased thickness of the GaN layer improves light emission. However, laser performance deteriorates with increasing thickness of waveguide layers more than 100 nm. Over all, LD with AlInGaN waveguide structure has highest OCF, slope efficiency and DQE.

915nm high-power broad area laser diodes with ultra-small optical confinement based on Asymmetric Decoupled Confinement Heterostructure (ADCH)

2015 ◽  
Author(s):  
Yuji Yamagata ◽  
Yumi Yamada ◽  
Masanori Muto ◽  
Syunta Sato ◽  
Ryozaburo Nogawa ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Optical Confinement ◽  
Broad Area

Analysis of optical loss on blue-violet laser diodes

2006 ◽  
Vol 3 (6) ◽  
pp. 2178-2181 ◽  
Author(s):  
J. K. Son ◽  
J. S. Hwang ◽  
S. N. Lee ◽  
T. Sakong ◽  
H. Paek ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Optical Loss

Optical-Mode Study of Galium Nitrate Based Laser Diodes

2012 ◽  
Vol 571 ◽  
pp. 476-481
Author(s):  
Douglas Alan Cattarusa ◽  
Xiao Min Jin ◽  
Xing Xing Fu ◽  
Xiang Ning Kang ◽  
Bei Zhang ◽  
...  
Keyword(s):  
Lower Order ◽  
Light Emission ◽  
Laser Diodes ◽  
Waveguide Structure ◽  
Waveguide Layer ◽  
Mode Analysis ◽  
Ingan Layer ◽  
Optical Confinement ◽  
Optical Mode ◽  
First Order

This paper focuses on the optical mode analysis of laser diodes to improve light emission. Under the mode analysis, we compare the optical confinement factor (OCF) percentage of the emitting light from the LDs. There are two structures which we analyze: a basic GaN waveguide structure and an InGaN waveguide structure. The second structure has additional InGaN waveguides and is analyzed under two additional design variations: the concentration of Indium and the thickness of the top waveguide layer. The results of this study indicate introducing InGaN waveguide layers correlates with lower order modes (zero and first order) and increase the OCF values. The top InGaN waveguide layer, which has a higher concentration of Indium, appears to increase the OCF. However, the increased thickness of the InGaN layer causes the lower modes’ OFC to decrease. Over all, in the best case, InGaN LD has an OCF of 1.8896%, which is about a 312% improvement compared to that of GaN LD ( OCF=0.4535%).

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