4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

1997 ◽  
Vol 70 (22) ◽  
pp. 2931-2933 ◽  
Author(s):  
D. Z. Garbuzov ◽  
R. U. Martinelli ◽  
H. Lee ◽  
R. J. Menna ◽  
P. K. York ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Waveguide Laser ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Continuous Wave Output Power

ROLE OF DISLOCATIONS IN InGaN-BASED LEDs AND LASER DIODES

2000 ◽  
Vol 10 (01) ◽  
pp. 271-279 ◽  
Author(s):  
SHUJI NAKAMURA
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Current ◽  
Single Quantum Well ◽  
Cw Operation ◽  
Current Operation ◽  
Composition Fluctuations

UV InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG at both low- and high-current operation due to the lack of localized energy states formed by In composition fluctuations. In order to improve the lifetime of laser diodes (LDs), ELOG had to be used because the operating current density of the LDs is much higher than that of LEDs. A violet InGaN multi-quantum-well GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets shows an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60°C.

High-Power Continuous-Wave Operation of BeZnCdSe Single-Quantum-Well Green Laser Diodes

2012 ◽  
Vol 5 (6) ◽  
pp. 062101 ◽  
Author(s):  
Sumiko Fujisaki ◽  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Shigehisa Tanaka ◽  
Shinji Tsuji ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Green Laser ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Continuous Wave Operation

Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes

1993 ◽  
Vol 32 (Part 2, No. 12A) ◽  
pp. L1750-L1752 ◽  
Author(s):  
Ayumu Tsujimura ◽  
Shigeo Yoshii ◽  
Shigeo Hayashi ◽  
Kazuhiro Ohkawa ◽  
Tsuneo Mitsuyu
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser

AlGaInP single quantum well laser diodes

1995 ◽  
Author(s):  
David P. Bour ◽  
David W. Treat ◽  
K. J. Beernink ◽  
Ross D. Bringans
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers

2021 ◽  
Vol 130 (17) ◽  
pp. 173105
Author(s):  
J. Yang ◽  
B. B. Wang ◽  
D. G. Zhao ◽  
Z. S. Liu ◽  
F. Liang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Ultraviolet Laser

Carrier heating in AlGaAs single quantum well laser diodes

1991 ◽  
Vol 59 (22) ◽  
pp. 2775-2777 ◽  
Author(s):  
Morris P. Kesler ◽  
Christoph S. Harder ◽  
Eberhard E. Latta
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Carrier Heating ◽  
Quantum Well Laser

High power 630 nm band laser diodes with strain-compensated single quantum well active layer

1997 ◽  
Vol 33 (12) ◽  
pp. 1084 ◽  
Author(s):  
R. Hiroyama ◽  
T. Uetani ◽  
Y. Bessho ◽  
M. Shono ◽  
M. Sawada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well

Erratum to: Modelling of a Cd1−xZnxTe/ZnTe Single Quantum Well for Laser Diodes

2017 ◽  
Vol 46 (11) ◽  
pp. 6736-6736
Author(s):  
Sai̇d Dehimi ◽  
Lakhdar Dehimi ◽  
Tarik Asar ◽  
Süleyman Özçelik
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well
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