Correlation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells

2007 ◽  
Vol 90 (23) ◽  
pp. 231901 ◽  
Author(s):  
J. C. Brooksby ◽  
J. Mei ◽  
F. A. Ponce
Keyword(s):  
Quantum Wells ◽  
Green Light ◽  
Threading Dislocations ◽  
Light Emitting ◽  
Spectral Luminescence ◽  
Ingan Quantum Wells

Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters

2003 ◽  
Vol 83 (13) ◽  
pp. 2578-2580 ◽  
Author(s):  
Yong-Hoon Cho ◽  
S. K. Lee ◽  
H. S. Kwack ◽  
J. Y. Kim ◽  
K. S. Lim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Light ◽  
Light Emitting ◽  
Ingan Quantum Wells

Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes

2007 ◽  
Vol 91 (4) ◽  
pp. 041915 ◽  
Author(s):  
Z. H. Wu ◽  
A. M. Fischer ◽  
F. A. Ponce ◽  
W. Lee ◽  
J. H. Ryou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting ◽  
Electrostatic Fields ◽  
Ingan Quantum Wells

Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells

2007 ◽  
Vol 91 (12) ◽  
pp. 123503 ◽  
Author(s):  
Ulrich T. Schwarz ◽  
H. Braun ◽  
K. Kojima ◽  
Y. Kawakami ◽  
S. Nagahama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Light ◽  
Light Emitting ◽  
Carrier Recombination ◽  
Piezoelectric Field ◽  
Ingan Quantum Wells

scholarly journals Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Changda Zheng ◽  
Li Wang ◽  
Chunlan Mo ◽  
Wenqing Fang ◽  
Fengyi Jiang
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Green Light ◽  
Xrd Analysis ◽  
Light Emitting ◽  
Green Led ◽  
Cap Layer ◽  
Different Thickness ◽  
Ingan Quantum Wells

GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow.

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Control of Barrier Width in Perovskite Multiple Quantum Wells for High Performance Green Light–Emitting Diodes

2018 ◽  
Vol 7 (3) ◽  
pp. 1801575 ◽  
Author(s):  
Maotao Yu ◽  
Chang Yi ◽  
Nana Wang ◽  
Liangdong Zhang ◽  
Renmeng Zou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Barrier Width ◽  
Light Emitting

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting
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