Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes

2007 ◽  
Vol 91 (4) ◽  
pp. 041915 ◽  
Author(s):  
Z. H. Wu ◽  
A. M. Fischer ◽  
F. A. Ponce ◽  
W. Lee ◽  
J. H. Ryou ◽  
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Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting ◽  
Electrostatic Fields ◽  
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Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

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Vol 118 (18) ◽  
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Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
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Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Control of Barrier Width in Perovskite Multiple Quantum Wells for High Performance Green Light–Emitting Diodes

2018 ◽  
Vol 7 (3) ◽  
pp. 1801575 ◽  
Author(s):  
Maotao Yu ◽  
Chang Yi ◽  
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Quantum Wells ◽  
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Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Barrier Width ◽  
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2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
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Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
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Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

2016 ◽  
Vol 120 (10) ◽  
pp. 103102 ◽  
Author(s):  
Lu Han ◽  
Kathleen Kash ◽  
Hongping Zhao
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2011 ◽  
Author(s):  
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Jing Zhang ◽  
Guangyu Liu ◽  
Takahiro Toma ◽  
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Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Ingan Quantum Wells
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