Physical and electrical characteristics of atomic-layer deposition-HfO2 films deposited on Si substrates having different silanol Si-OH densities

2013 ◽  
Vol 31 (1) ◽  
pp. 01A132 ◽  
Author(s):  
Joel Molina ◽  
Carlos Zuniga ◽  
Wilfrido Calleja ◽  
Pedro Rosales ◽  
Alfonso Torres ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Si Substrates ◽  
Layer Deposition

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

scholarly journals Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition

2018 ◽  
Vol 6 (24) ◽  
pp. 6471-6482 ◽  
Author(s):  
Ali Haider ◽  
Petro Deminskyi ◽  
Mehmet Yilmaz ◽  
Kholoud Elmabruk ◽  
Ibrahim Yilmaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Anodized Aluminum ◽  
Temperature Plasma ◽  
Anodized Aluminum Oxide ◽  
Si Substrates ◽  
Cylinder Arrays ◽  
Layer Deposition

In this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays (HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated low-temperature plasma-assisted atomic layer deposition (PA-ALD).

scholarly journals Influence of Oxidant Gas of Atomic Layer Deposition on Electrical Characteristics of Al2O3 films

2018 ◽  
Vol 61 (5) ◽  
pp. 280-285 ◽  
Author(s):  
Toshihide NABATAME ◽  
Masayuki KIMURA ◽  
Kazuya YUGE ◽  
Mari INOUE ◽  
Naoki IKEDA ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Layer Deposition

Selective Atomic Layer Deposition of Metal Oxide Thin Films on Patterned Self-Assembled Monolayers Formed by Microcontact Printing

2007 ◽  
Vol 7 (11) ◽  
pp. 3758-3764
Author(s):  
Byoung H. Lee ◽  
Myung M. Sung
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Microcontact Printing ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Si Substrates ◽  
Layer Deposition ◽  
Assembled Monolayers

We demonstrate a selective atomic layer deposition of TiO2, ZrO2, and ZnO thin films on patterned alkylsiloxane self-assembled monolayers. Microcontact printing was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. The patterned monolayers define and direct the selective deposition of the metal oxide thin films using atomic layer deposition. The selective atomic layer deposition is based on the fact that the metal oxide thin films are selectively deposited only on the regions exposing the silanol groups of the Si substrates because the regions covered with the alkylsiloxane monolayers do not have any functional group to react with precursors.

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