Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects

2007 ◽  
Vol 101 (11) ◽  
pp. 113506 ◽  
Author(s):  
Lawrence H. Robins ◽  
Kris A. Bertness ◽  
Joy M. Barker ◽  
Norman A. Sanford ◽  
John B. Schlager
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Structural Study ◽  
Electron Irradiation ◽  
Molecular Beam ◽  
Irradiation Effects ◽  
Gan Nanowires ◽  
Catalyst Free

Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy

2006 ◽  
Vol 88 (21) ◽  
pp. 213106 ◽  
Author(s):  
John B. Schlager ◽  
Norman A. Sanford ◽  
Kris A. Bertness ◽  
Joy M. Barker ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Study ◽  
Gan Nanowires ◽  
Catalyst Free

Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy

2014 ◽  
Vol 115 (4) ◽  
pp. 043517 ◽  
Author(s):  
Marta Sobanska ◽  
Kamil Klosek ◽  
Jolanta Borysiuk ◽  
Slawomir Kret ◽  
Giorgi Tchutchulasvili ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Amorphous Al2o3

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

2008 ◽  
Vol 103 (12) ◽  
pp. 124309 ◽  
Author(s):  
John B. Schlager ◽  
Kris A. Bertness ◽  
Paul T. Blanchard ◽  
Lawrence H. Robins ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Steady State ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Time Resolved ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Time Resolved Photoluminescence

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

InAs1−xPxnanowires grown by catalyst-free molecular-beam epitaxy

2013 ◽  
Vol 24 (8) ◽  
pp. 085707 ◽  
Author(s):  
I Isakov ◽  
M Panfilova ◽  
M J L Sourribes ◽  
V Tileli ◽  
A E Porter ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free
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