Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy

Nanoscale ◽  
2013 ◽  
Vol 5 (12) ◽  
pp. 5283 ◽  
Author(s):  
S. Zhao ◽  
M. G. Kibria ◽  
Q. Wang ◽  
H. P. T. Nguyen ◽  
Z. Mi
2006 ◽  
Vol 88 (21) ◽  
pp. 213106 ◽  
Author(s):  
John B. Schlager ◽  
Norman A. Sanford ◽  
Kris A. Bertness ◽  
Joy M. Barker ◽  
Alexana Roshko ◽  
...  

2014 ◽  
Vol 115 (4) ◽  
pp. 043517 ◽  
Author(s):  
Marta Sobanska ◽  
Kamil Klosek ◽  
Jolanta Borysiuk ◽  
Slawomir Kret ◽  
Giorgi Tchutchulasvili ◽  
...  

2009 ◽  
Vol 97 (3) ◽  
pp. 553-557 ◽  
Author(s):  
J. S. Wang ◽  
C. S. Yang ◽  
P. I. Chen ◽  
C. F. Su ◽  
W. J. Chen ◽  
...  

2008 ◽  
Vol 103 (12) ◽  
pp. 124309 ◽  
Author(s):  
John B. Schlager ◽  
Kris A. Bertness ◽  
Paul T. Blanchard ◽  
Lawrence H. Robins ◽  
Alexana Roshko ◽  
...  

2013 ◽  
Vol 24 (8) ◽  
pp. 085707 ◽  
Author(s):  
I Isakov ◽  
M Panfilova ◽  
M J L Sourribes ◽  
V Tileli ◽  
A E Porter ◽  
...  

2011 ◽  
Vol 334 (1) ◽  
pp. 177-180 ◽  
Author(s):  
Rafael Mata ◽  
Karine Hestroffer ◽  
Jorge Budagosky ◽  
Ana Cros ◽  
Catherine Bougerol ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document