Growth and Characterization of BRS GaInAsp-GaAs Laser Emitting At 0.8μm by Gas-Source Molecular Beam Epitaxy

1995 ◽  
Vol 417 ◽  
Author(s):  
C. Jelen ◽  
S. Slivken ◽  
J. Diaz ◽  
M. Erdtmann ◽  
S. Kim ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Laser System ◽  
Chemical Vapor ◽  
Ridge Structure ◽  
Gas Source ◽  
Gaas Laser

AbstractGaInAsP-GaAs buried ridge structure lasers emitting at 0.8μm have been fabricated on material grown in two steps by low pressure metalorganic chemical vapor deposition and gas-source molecular beam epitaxy. Preliminary laser results are reported, and the feasibility of using gas-source molecular beam epitaxy for the regrowth of sophisticated laser system is demonstrated.

Facet Formation in Submicron Selective Growth of Si/SiGe

1996 ◽  
Vol 448 ◽  
Author(s):  
K. L. Wang ◽  
Dawen Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Gas Source ◽  
Pressure Chemical ◽  
Facet Growth ◽  
Facet Formation

AbstractThe paper reviews the work in mostly Si and SiGe epitaxy and some III-V work on patterned substrates. Results of metalorganic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), gas source molecular beam epitaxy (GSMBE), and solid source molecular beam epitaxy (MBE) were discussed in the context of facet formation and mass accumulation. A model was shown to explain the facet formation and its evolution in the process of growth. Further work on surface diffusion and nucleation processes as functions of temperature and other growth parameters will provide needed information for accurate modeling of the facet growth process.

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