Efficient generation of coherent acoustic phonons in (111) InGaAs∕GaAs multiple quantum wells through piezoelectric effects

2007 ◽  
Vol 90 (17) ◽  
pp. 172102 ◽  
Author(s):  
Yu-Chieh Wen ◽  
Li-Chang Chou ◽  
Hao-Hsiung Lin ◽  
Vitalyi Gusev ◽  
Kung-Hsuan Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acoustic Phonons ◽  
Efficient Generation ◽  
Piezoelectric Effects ◽  
Coherent Acoustic Phonons

scholarly journals Narrow-band detection of propagating coherent acoustic phonons in piezoelectric InGaN∕GaN multiple-quantum wells

2007 ◽  
Vol 91 (13) ◽  
pp. 133101 ◽  
Author(s):  
Cheng-Ying Chen ◽  
Yu-Chieh Wen ◽  
Hung-Ping Chen ◽  
Tzu-Ming Liu ◽  
Chang-Chi Pan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Narrow Band ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acoustic Phonons ◽  
Coherent Acoustic Phonons

Enhancement of coherent acoustic phonons in InGaN multiple quantum wells

2015 ◽  
Author(s):  
Shopan D. Hafiz ◽  
Fan Zhang ◽  
Morteza Monavarian ◽  
Vitaliy Avrutin ◽  
Hadis Morkoç ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acoustic Phonons ◽  
Coherent Acoustic Phonons

scholarly journals Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells

1998 ◽  
Vol 73 (23) ◽  
pp. 3426-3428 ◽  
Author(s):  
H. S. Kim ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Piezoelectric Effects

Piezoelectric effects on the dynamics of optical transitions in GaN/AlxGa1-xN multiple quantum wells

1999 ◽  
Author(s):  
Hyeon S. Kim ◽  
Jing Y. Lin ◽  
Hongxing Jiang ◽  
Weng W. Chow ◽  
Andrei Botchkarev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Piezoelectric Effects

Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

1998 ◽  
Vol 537 ◽  
Author(s):  
H. S. Kim ◽  
Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Peak Position ◽  
Multiple Quantum Wells ◽  
Collective Effects ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Delay Times ◽  
Piezoelectric Effects ◽  
Piezoelectric Field ◽  
Time Resolved Photoluminescence

AbstractPiezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al0.15Ga0.85N MQWs.

scholarly journals Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

1999 ◽  
Vol 4 (S1) ◽  
pp. 130-135
Author(s):  
H. S. Kim ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Peak Position ◽  
Multiple Quantum Wells ◽  
Collective Effects ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Delay Times ◽  
Piezoelectric Effects ◽  
Piezoelectric Field ◽  
Time Resolved Photoluminescence

Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al0.15Ga0.85N MQWs.

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