Piezoelectric effects on the dynamics of optical transitions in GaN/AlxGa1-xN multiple quantum wells

1999 ◽  
Author(s):  
Hyeon S. Kim ◽  
Jing Y. Lin ◽  
Hongxing Jiang ◽  
Weng W. Chow ◽  
Andrei Botchkarev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Piezoelectric Effects

scholarly journals Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells

1998 ◽  
Vol 73 (23) ◽  
pp. 3426-3428 ◽  
Author(s):  
H. S. Kim ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Piezoelectric Effects

Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Time Resolved ◽  
Metal Organic ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTTime-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy

1996 ◽  
Vol 69 (17) ◽  
pp. 2453-2455 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Salvador ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Transitions

Efficient generation of coherent acoustic phonons in (111) InGaAs∕GaAs multiple quantum wells through piezoelectric effects

2007 ◽  
Vol 90 (17) ◽  
pp. 172102 ◽  
Author(s):  
Yu-Chieh Wen ◽  
Li-Chang Chou ◽  
Hao-Hsiung Lin ◽  
Vitalyi Gusev ◽  
Kung-Hsuan Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acoustic Phonons ◽  
Efficient Generation ◽  
Piezoelectric Effects ◽  
Coherent Acoustic Phonons

scholarly journals Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells

1999 ◽  
Vol 4 (S1) ◽  
pp. 191-196
Author(s):  
W. Shan ◽  
J.W. Ager ◽  
W. Walukiewicz ◽  
E.E. Haller ◽  
M.D. McCluskey ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Pressure Dependence ◽  
Applied Pressure ◽  
Mechanical Effect ◽  
Localized States ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
The Difference

The effect of hydrostatic pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied. Photoluminescence (PL) and photomodulated transmission (PT) measurements were performed under applied pressure to examine the pressure dependence of optical transitions associated with confined states in MQWs. The PL emission from the MQWs was found to shift linearly to higher energy with applied pressure but exhibit a significantly weaker pressure dependence compared to epilayer samples with similar bandgap energies. Similar pressure coefficients obtained by PT measurements rule out the possibility of PL resulting from deep localized states. We show that the difference in the compressibility of InGaN and of GaN induces a tensile strain in the compressively strained InGaN well layers that partially compensates the applied hydrostatic pressure. This mechanical effect is the primary factor for the smaller pressure dependence of the optical transitions in the InGaN/GaN MQWs. At pressure above 100 kbar, the PL signal in MQWs samples is quenched, indicating that the carriers involved in the radiative recombination processes in the well layers originate primarily from the adjacent GaN layers.

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