Characterization of longitudinal acoustic phonons in InGaAsP multiple quantum wells by asynchronous optical sampling

2018 ◽  
Vol 113 (20) ◽  
pp. 201102 ◽  
Author(s):  
K. Hitachi ◽  
M. Someya ◽  
A. Ishizawa ◽  
T. Nishikawa ◽  
H. Gotoh
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acoustic Phonons ◽  
Longitudinal Acoustic ◽  
Optical Sampling

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

2011 ◽  
Vol 98 (18) ◽  
pp. 181904 ◽  
Author(s):  
Shigetaka Tomiya ◽  
Yuya Kanitani ◽  
Shinji Tanaka ◽  
Tadakatsu Ohkubo ◽  
Kazuhiro Hono
Keyword(s):  
Quantum Wells ◽  
Atomic Scale ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Scale Characterization

Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type Ii ◽  
Layer Deposition

scholarly journals Narrow-band detection of propagating coherent acoustic phonons in piezoelectric InGaN∕GaN multiple-quantum wells

2007 ◽  
Vol 91 (13) ◽  
pp. 133101 ◽  
Author(s):  
Cheng-Ying Chen ◽  
Yu-Chieh Wen ◽  
Hung-Ping Chen ◽  
Tzu-Ming Liu ◽  
Chang-Chi Pan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Narrow Band ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acoustic Phonons ◽  
Coherent Acoustic Phonons

The growth and characterization of Si1−xGex multiple quantum wells on Si(110) and Si(111)

1996 ◽  
pp. 21-26
Author(s):  
P.E. Thompson ◽  
T.L. Kreifels ◽  
M. Gregg ◽  
R.L. Hengehold ◽  
Y.K. Yeo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum

Epitaxial Growth and Characterization of Nonpolar A-Plane AlGaN-Based Multiple Quantum Wells

2018 ◽  
Vol 934 ◽  
pp. 8-12
Author(s):  
Jian Guo Zhao ◽  
Xiong Zhang ◽  
Jia Qi He ◽  
Shuai Chen ◽  
Zi Li Wu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Modulation Method ◽  
Duty Ratio ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Metal Organic

A serious of non-polar a-plane AlGaN-based multiple quantum wells (MQWs) were successfully grown on the semi-polar r-plane sapphire substrate with metal organic chemical vapor deposition technology. Intense MQWs-related emission peaks at an emission wavelength covered from 277-294 nm were observed based on the photoluminescence measurement. It was found that the employment of the trimethyl-aluminum (TMAl) flow duty-ratio modulation method which was developed based on the two-way pulsed-flows growth technique played a crucial role to control the Al composition of the non-polar a-plane AlGaN epi-layers. The non-polar a-plane AlGaN-based MQWs were deposited with the new developed TMAl flow duty-ratio modulation technique. Evident-3th order X-ray diffraction (XRD) satellite peak was observed from the high resolution-XRD measurement, proving the successful growth of non-polar a-plane AlGaN-based MQWs with abrupt hetero-interfaces.

Characterization of a-plane InGaN multiple-quantum wells grown on maskless lateral epitaxially overgrown a-plane GaN

2008 ◽  
Vol 92 (11) ◽  
pp. 111106 ◽  
Author(s):  
Sung-Nam Lee ◽  
H. S. Paek ◽  
H. Kim ◽  
Y. M. Park ◽  
T. Jang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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