Dephasing of Bloch Oscillations due to Interface Roughness Scattering in GaAs/AlAs Superlattices

2007 ◽  
Author(s):  
Takeya Unuma ◽  
Norihiko Sekine ◽  
Kazuhiko Hirakawa
Keyword(s):  
Interface Roughness ◽  
Bloch Oscillations ◽  
Interface Roughness Scattering

Interface roughness scattering in type II broken-gap GaInAsSb/InAs single heterostructures

2007 ◽  
Vol 102 (11) ◽  
pp. 113710 ◽  
Author(s):  
M. P. Mikhailova ◽  
K. D. Moiseev ◽  
T. I. Voronina ◽  
T. S. Lagunova ◽  
Yu. P. Yakovlev
Keyword(s):  
Interface Roughness ◽  
Type Ii ◽  
Interface Roughness Scattering ◽  
Broken Gap

Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs

2004 ◽  
Vol 19 (4) ◽  
pp. S155-S157 ◽  
Author(s):  
M Boriçi ◽  
J R Watling ◽  
R C W Wilkins ◽  
L Yang ◽  
J R Barker ◽  
...  
Keyword(s):  
Electron Transport ◽  
Interface Roughness ◽  
Strained Si ◽  
Interface Roughness Scattering

Interface roughness scattering-limited electron mobility in AlAs/GaAs and Ga0.5In0.5P/GaAs wells

1999 ◽  
Vol 86 (1) ◽  
pp. 459-463 ◽  
Author(s):  
B. R. Nag ◽  
Sanghamitra Mukhopadhyay ◽  
Madhumita Das
Keyword(s):  
Electron Mobility ◽  
Interface Roughness ◽  
Interface Roughness Scattering

MAGNETORESISTANCE OF A SILICON MOSFET ON THE (111) SURFACE IN A PARALLEL MAGNETIC FIELD

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1529-1534 ◽  
Author(s):  
A. GOLD ◽  
O. ANTONIE
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Zero Temperature ◽  
Parallel Magnetic Field ◽  
Interface Roughness Scattering ◽  
Dimensional Electron Gas ◽  
Passivated Silicon ◽  
Theoretical Results

In comparison with silicon (100) we argue that the silicon (111) surface is a surface with higher mobility and stronger Coulomb interaction effects. For the resistance of the two-dimensional electron gas we discuss the effects of a magnetic field parallel to the surface: for zero temperature we present theoretical results for the magnetoresistance of an electron gas at the surface of silicon (111) with a six-fold valley degeneracy. Impurity scattering and interface roughness scattering are taken into account. A recent study of a hydrogen-passivated silicon (111) surface showed a mobility proportional to the electron density. We present, using a model for neutral impurities, predictions for the magnetoresistance of this sample in a parallel magnetic field.

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