Growth dynamics and characterization of SiC quantum dots synthesized by low-frequency inductively coupled plasma assisted rf magnetron sputtering

2007 ◽  
Vol 101 (9) ◽  
pp. 094304 ◽  
Author(s):  
Q. J. Cheng ◽  
J. D. Long ◽  
S. Xu
Keyword(s):  
Quantum Dots ◽  
Magnetron Sputtering ◽  
Inductively Coupled Plasma ◽  
Low Frequency ◽  
Growth Dynamics ◽  
Rf Magnetron Sputtering ◽  
Inductively Coupled

Silicon quantum dots embedded in amorphous SiC matrix for third-generation solar cells: Microstructure control by RF discharge power

2015 ◽  
Vol 08 (05) ◽  
pp. 1550054 ◽  
Author(s):  
Qijin Cheng ◽  
Igor Levchenko ◽  
Denyuan Song ◽  
Shuyan Xu ◽  
Kostya Ken Ostrikov
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Inductively Coupled Plasma ◽  
Low Frequency ◽  
Rf Discharge ◽  
Third Generation ◽  
Silicon Quantum Dots ◽  
Inductively Coupled ◽  
Carbide Matrix ◽  
Photovoltaic Solar Cells

A low-frequency (460 kHz), low-pressure, thermally non-equilibrium, high-density inductively coupled plasma (ICP) has been used to synthesize a novel, advanced photovoltaic material suitable for fabrication of third-generation solar cells. Silicon quantum dots (SQDs) embedded in an amorphous silicon carbide matrix were prepared at a very low substrate temperature of approximately 200°C without any hydrogen dilution. The effect of the radio-frequency (RF) power of the plasma discharge on the morphology and structure of the embedded quantum dots was studied. A brief discussion on the possible mechanisms of the quantum dot formation in the ICP is presented. This study is relevant to third-generation photovoltaic solar cells.

SEPARATED CuInSe2 QUANTUM DOTS ON ZnO THIN FILM BY ICP-ASSISTED MAGNETRON SPUTTERING

2007 ◽  
Vol 14 (02) ◽  
pp. 225-228 ◽  
Author(s):  
S. Y. HUANG ◽  
S. XU ◽  
J. D. LONG ◽  
Q. J. CHENG ◽  
X. B. XU ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Magnetron Sputtering ◽  
Low Frequency ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film ◽  
Lateral Size ◽  
Zno Film ◽  
X Ray ◽  
Deposition Parameters ◽  
Compound Target

Uniformly hemispherical separated CuInSe 2 (CIS) quantum dots (QDs) were fabricated by low-frequency inductivity coupled plasma (LF-ICP) assisted radio-frequency (RF) magnetron sputtering technique from a ternary compound target on Si (100) and glass substrate with ZnO film serving as buffer layer. The average lateral size and densities of the QDs could be controlled by appropriate deposition parameters. The distribution scope of diameters was from 40 to 120 nm, density was from 4.5E9 to 2.1E11/cm2. Field-emission scanning electron microscope (FE-SEM) and energy-dispersive X-ray (EDX) spectrometer were adopted to measure the properties of CIS QDs.

CdS NANORODS FABRICATED BY ICP-ASSISTED MAGNETRON SPUTTERING AT ROOM TEMPERATURE

2008 ◽  
Vol 15 (04) ◽  
pp. 515-518
Author(s):  
S. Y. HUANG ◽  
S. XU ◽  
J. D. LONG ◽  
J. W. CHAI ◽  
Q. J. CHENG
Keyword(s):  
Magnetron Sputtering ◽  
Inductively Coupled Plasma ◽  
Room Temperature ◽  
Low Frequency ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Inductively Coupled ◽  
Cds Nanorods ◽  
Deposition Parameters

Cadmium sulfide ( CdS ) nanocrystals are successfully fabricated on glass and silicon substrates at room temperature with low-frequency (460 kHz) inductively coupled plasma assisted magnetron sputtering technique. Both size and shape can be controlled by changing deposition parameters and substrates. Field-emission scanning electron microscope, energy dispersive X-ray spectroscopy, and X-ray diffraction are adopted to measure the properties of CdS nanorods.

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