The influence of nitrogen incorporation on performance and bias temperature instability of metal oxide semiconductor field effect transistors with ultrathin high-k gate stacks

J. C. Liao; Y. K. Fang; C. H. Chen; Y. T. Hou; P. F. Hsu; K. C. Lin; K. T. Huang; T. L. Lee; M. S. Liang

doi:10.1063/1.3025420

The influence of nitrogen incorporation on performance and bias temperature instability of metal oxide semiconductor field effect transistors with ultrathin high-k gate stacks

Applied Physics Letters ◽

10.1063/1.3025420 ◽

2008 ◽

Vol 93 (19) ◽

pp. 193506 ◽

Cited By ~ 2

Author(s):

J. C. Liao ◽

Y. K. Fang ◽

C. H. Chen ◽

Y. T. Hou ◽

P. F. Hsu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Nitrogen Incorporation ◽

High K

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Effect of an Ultrathin SiN Cap Layer on the Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with HfSiON Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.121503 ◽

2010 ◽

Vol 49 (12) ◽

pp. 121503

Author(s):

Shiyang Zhu ◽

Shinya Takeue ◽

Anri Nakajima

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Cap Layer

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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Device Characteristics and Aggravated Negative Bias Temperature Instability inp-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3064 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3064-3069 ◽

Cited By ~ 8

Author(s):

Chia-Yu Lu ◽

Horng-Chih Lin ◽

Yi-Feng Chang ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Compressive Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/19/9/097306 ◽

2010 ◽

Vol 19 (9) ◽

pp. 097306 ◽

Cited By ~ 6

Author(s):

Cao Yan-Rong ◽

Ma Xiao-Hua ◽

Hao Yue ◽

Tian Wen-Chao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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New Simulation Method to Characterize the Recoverable Component of Dynamic Negative-Bias Temperature Instability in p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Journal of Electronic Materials ◽

10.1007/s11664-014-2978-8 ◽

2014 ◽

Vol 43 (4) ◽

pp. 1207-1213 ◽

Cited By ~ 3

Author(s):

H. Hussin ◽

N. Soin ◽

M.F. Bukhori ◽

Y. Abdul Wahab ◽

S. Shahabuddin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Simulation Method ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2011 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2011-2014 ◽

Cited By ~ 2

Author(s):

Jone F. Chen ◽

Dao-Hong Yang ◽

Chih-Yung Lin ◽

Shien-Yang Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Supply Voltage ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Investigation of Positive and Negative Bias Temperature Instability of High-κ Dielectric Metal Gate Metal–Oxide–Semiconductor-Field-Effect-Transistors by Random Telegraph Signal

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.036503 ◽

2013 ◽

Vol 52 (3R) ◽

pp. 036503 ◽

Cited By ~ 1

Author(s):

Da-Cheng Huang ◽

Jeng Gong ◽

Chih-Fang Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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Improvement in Mobility and Negative-Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with Atomic-Layer-Deposited Si–Nitride/SiO2Stack Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1874 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 1874-1878 ◽

Cited By ~ 1

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc25 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC25

Author(s):

Yandong He ◽

Gang Du ◽

Yunxiang Yang ◽

Ganggang Zhang ◽

Xing Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Forward Body Bias

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Anomalous negative bias temperature instability behavior in p-channel metal-oxide-semiconductor field-effect transistors with HfSiON∕SiO2 gate stack

Applied Physics Letters ◽

10.1063/1.2745649 ◽

2007 ◽

Vol 90 (23) ◽

pp. 233505

Author(s):

Shih-Chang Chen ◽

Chao-Hsin Chien ◽

Jen-Chung Lou

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Gate Stack ◽

Temperature Instability ◽

Bias Temperature Instability

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