High-temperature residual stresses in thin films characterized by x-ray diffraction substrate curvature method

2007 ◽  
Vol 78 (3) ◽  
pp. 036103 ◽  
Author(s):  
J. Keckes ◽  
E. Eiper ◽  
K. J. Martinschitz ◽  
H. Köstenbauer ◽  
R. Daniel ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Residual Stresses ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Curvature

X-ray diffraction studies elucidating high temperature superconducting properties of YBa2Cu3O7−x thin films

1994 ◽  
Vol 209 (4) ◽  
Author(s):  
M. Schieber ◽  
Y. Ariel ◽  
A. Raizman ◽  
S. Rotter
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Quantitative Evaluation ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Temperature Superconducting

AbstractA quantitative evaluation of the influence of the amount of the crystallographically unoriented grains of YBa

scholarly journals Investigation on origins of residual stresses in Ni-NiO system by X-ray diffraction at high temperature

1993 ◽  
Vol 03 (C9) ◽  
pp. C9-987-C9-997 ◽  
Author(s):  
Chun Liu ◽  
Anne-Marie Huntz ◽  
Jean-Lou Lebrun
Keyword(s):  
High Temperature ◽  
Residual Stresses ◽  
X Ray Diffraction ◽  
X Ray

Annealing Time Dependence on 1.5μm Photoluminescence of Laser-Ablated β-FeSi2

2005 ◽  
Vol 891 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Kunitoshi Aoki ◽  
Mohammad Zakir Hossain ◽  
Tomohiro Fukuda ◽  
Noboru Miura
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Thermal Diffusion ◽  
Annealing Time ◽  
Crystal Quality ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Long Time

ABSTRACTWe prepared β-FeSi2 thin-films by using a Pulsed Laser Deposition (PLD) method and succeeded to observe photoluminescence (PL) around 1.5 μm corresponding to β-FeSi2 band from the long-time and high-temperature annealed β-FeSi2 thin-films. The β-FeSi2 thin-films were ablated on Si(111) substrates heated at 550°C. After ablation, long-time and high-temperature thermal annealing was performed in order to improve the crystal-quality. Annealing times were 5, 10, 20 and 40 hrs, and annealing temperature was kept at 900 °C. Crystallinity was evaluated by an X-ray diffraction (XRD) measurement. We have observed eminent improvement on crystal-quality of β-FeSi2 thin-films. Annealed samples show (220) or (202) X-ray diffraction signals of β-FeSi2 and the full width at half maximum (FWHM) of these peaks were 0.27° although the thickness of the samples decreased with annealing time. Thermal-diffusion of Si atoms was observed from substrate to thin-films. Fe atoms in the ablated thin-films also diffused into the substrate. The relationship between the thickness of β-FeSi2 thin-films and the thermal-diffusion were investigated with rutherford backscattering (RBS) measurement. Maximum photoluminescence intensity around 1.5 μm was observed from the thickest β-FeSi2 thin-film with only 5 hrs annealing.

Influence of deposition parameters on the residual stresses of WC-Wo sputtered thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Substrate Surface ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compressive Stresses ◽  
Deposition Parameters ◽  
Cobalt Thin Films

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.

X-ray diffraction analysis of residual stresses in textured ZnO thin films

2017 ◽  
Vol 395 ◽  
pp. 16-23 ◽  
Author(s):  
E. Dobročka ◽  
P. Novák ◽  
D. Búc ◽  
L. Harmatha ◽  
J. Murín
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Diffraction Analysis ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray

High temperature x-ray diffraction studies of zirconia thin films prepared by reactive pulsed laser deposition

2011 ◽  
Vol 47 (4) ◽  
pp. 415-422 ◽  
Author(s):  
G. Balakrishnan ◽  
P. Kuppusami ◽  
S. Murugesan ◽  
E. Mohandas ◽  
D. Sastikumar
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray

X-Ray Diffraction and TEM Studies of the Delamination of Copper Thin Films from Glass and Silica Substrates

1989 ◽  
Vol 167 ◽  
Author(s):  
Alan G. Fox ◽  
Rowland M. Cannon
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Bragg Diffraction ◽  
Slight Reduction ◽  
X Ray Diffraction ◽  
Dislocation Generation ◽  
X Ray ◽  
Cu Films ◽  
Glass Substrates ◽  
Tensile Strains

AbstractThe events associated with fractures along interfaces between copper thin films and glass substrates were investigated by X-ray diffraction and transmission electron microscopy (TEM). In the as-bonded films the Bragg diffraction lines were shifted and broadened (relative to pure strain-free copper) due to residual in-plane tensile strains arising from the differences in thermal contraction between the copper and the substrates; TEM studies of these films in cross-section showed that the residual stresses had been relieved somewhat by dislocation densities as high as 1010 lines/cm2 in Cu/SiO2 films.The passage of a crack along the Cu/glass interfaces led to a significant reduction in the line shift and a slight reduction in the line broadening. Thus dislocations generated by the fracture events ‘plastically relaxed’ the residual stresses present in the as-bonded Cu by superposing a compressive component onto the pre-existing in-plane tensile strains. This dislocation generation was confirmed by TEM studies. In addition, it was found that the greater the strength of an interface, the greater was the reduction in mean strain due to the fracture; this is consistent with a larger crack-tip plastic zone and the generation of greater numbers of dislocations in the Cu films by fracture along interfaces of higher toughness (i.e. bond strength).

Evolution of Residual Stresses in Thin Films Deposited on Mechanically Strained Substrates

1990 ◽  
Vol 203 ◽  
Author(s):  
G. Sheikh ◽  
A. Berger ◽  
I. C. Noyan
Keyword(s):  
Thin Films ◽  
Simple Model ◽  
Residual Stresses ◽  
Vapor Phase ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray ◽  
Cu Films ◽  
Residual Film ◽  
Nickel Substrates

ABSTRACTA simple model for the formation of residual stresses in thin films deposited on elastically strained substrates was derived and experimentally tested. In the experiments, Cu thin films were deposited on elastically stretched nickel substrates. These Cu films were2 to 4.m thick and were deposited through vapor phase evaporation or electroplating. The loads applied during the deposition were then relaxed, and the total stress in both the film and the substrate were monitored (by x-ray diffraction) during this relaxation. It was seen that the final (residual) film stresses were significantly different for bothdeposition methods. The causes of such differences are discussed.

Sign in / Sign up

Export Citation Format

Share Document