Phase-field model for epitaxial ferroelectric and magnetic nanocomposite thin films

2007 ◽  
Vol 90 (5) ◽  
pp. 052909 ◽  
Author(s):  
J. X. Zhang ◽  
Y. L. Li ◽  
D. G. Schlom ◽  
L. Q. Chen ◽  
F. Zavaliche ◽  
...  
2000 ◽  
Vol 652 ◽  
Author(s):  
Y. L. Li ◽  
S. Y. Hu ◽  
Z. K. Liu ◽  
L. Q. Chen

ABSTRACTA phase-field model for predicting the domain structure evolution in constrained ferroelectric thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. In particular, the model is applied to the domain structure evolution during a cubic→tetragonal proper ferro- electric phase transition. The effect of substrate constraint on the volume fractions of domain variants, domain-wall orientations, and domain shapes is studied. It is shown that the predicted results agree very well with existing experimental observations in ferroelectric thin films.


2006 ◽  
Vol 14 (3) ◽  
pp. 433-443 ◽  
Author(s):  
Mathieu Bouville ◽  
Shenyang Hu ◽  
Long-Qing Chen ◽  
Dongzhi Chi ◽  
David J Srolovitz

2001 ◽  
Vol 78 (24) ◽  
pp. 3878-3880 ◽  
Author(s):  
Y. L. Li ◽  
S. Y. Hu ◽  
Z. K. Liu ◽  
L. Q. Chen

2007 ◽  
Vol 129 ◽  
pp. 89-94 ◽  
Author(s):  
Nele Moelans ◽  
Bart Blanpain ◽  
Patrick Wollants

A phase field model for simulating grain growth and thermal grooving in thin films is presented. Orientation dependence of the surface free energy and misorientation dependence of the grain boundary free energy are included in the model. Moreover, the model can treat different mechanisms for groove formation, namely through volume diffusion, surface diffusion, evaporation-condensation, or a combination of these mechanisms. The evolution of a groove between two grains has been simulated for different surface and grain boundary energies and different groove formation mechanisms.


RSC Advances ◽  
2019 ◽  
Vol 9 (13) ◽  
pp. 7575-7586 ◽  
Author(s):  
Le Van Lich ◽  
Van-Hai Dinh

New phase field model to reveal switching mechanism of needle domain in compositionally graded ferroelectric thin film.


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