p-type conductivity and donor-acceptor pair emission in Cd1−xFexS dilute magnetic semiconductors

2006 ◽  
Vol 89 (26) ◽  
pp. 262118 ◽  
Author(s):  
X. J. Wu ◽  
D. Z. Shen ◽  
Z. Z. Zhang ◽  
J. Y. Zhang ◽  
K. W. Liu ◽  
...  
Keyword(s):  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Acceptor Pair ◽  
Type Conductivity ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type

scholarly journals On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation

2001 ◽  
Vol 6 ◽  
Author(s):  
F. Shahedipour ◽  
B.W. Wessels
Keyword(s):  
Luminescence Intensity ◽  
Random Distribution ◽  
Blue Emission ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Shallow Acceptors ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Time Resolved Photoluminescence

The decay dynamics of the 2.8 eV emission band in p-type GaN was investigated using time-resolved photoluminescence spectroscopy. The luminescence intensity decays non-exponentially. The decay dynamics were consistent with donor-acceptor pair recombination for a random distribution of pair distances. Calculations using the Thomas-Hopfield model indicated that recombination involves deep donors and shallow acceptors.

scholarly journals Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

1999 ◽  
Vol 4 (S1) ◽  
pp. 526-531 ◽  
Author(s):  
U. Birkle ◽  
M. Fehrer ◽  
V. Kirchner ◽  
S. Einfeldt ◽  
D. Hommel ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Atomic Layer ◽  
Typical Feature ◽  
Acceptor Pair ◽  
Carbon Doped ◽  
Order Of Magnitude ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Carbon Concentrations

GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm−3 to 1020 cm−3. The incorporation of carbon leads to a reduction of the background electron concentration by one order of magnitude but the material remains n-type. For high carbon concentrations a re-increase of the carrier concentration is observed which is related to selfcompensation. Investigations of the donor-acceptor-pair luminescence show that doping with carbon is accompanied by the generation of a new donor exhibiting a thermal activation energy of about 55 meV. Layers grown by atomic layer epitaxy are marked by an increased intensity of the donor-acceptor-pair band luminescence which is attributed to the enforced incorporation of carbon onto the nitrogen sublattice. The yellow luminescence is found to be a typical feature of all carbon doped layers in contrast to nominally undoped samples.

Donor–acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 122-123 ◽  
pp. 368-370 ◽  
Author(s):  
S.J. Jiao ◽  
Y.M. Lu ◽  
D.Z. Shen ◽  
Z.Z. Zhang ◽  
B.H. Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Doping ◽  
Molecular Beam ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type

Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

1998 ◽  
Vol 537 ◽  
Author(s):  
U. Birkle ◽  
M. Fehrer ◽  
V. Kirchner ◽  
S. Einfeldt ◽  
D. Hommel ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Atomic Layer ◽  
Typical Feature ◽  
Acceptor Pair ◽  
Carbon Doped ◽  
Order Of Magnitude ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Carbon Concentrations

AbstractGaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm-1 to 10 20 cm-1. The incorporation of carbon leads to a reduction of the background electron concentration by one order of magnitude but the material remains n-type. For high carbon concentrations a re-increase of the carrier concentration is observed which is related to selfcompensation. Investigations of the donor-acceptor-pair luminescence show that doping with carbon is accompanied by the generation of a new donor exhibiting a thermal activation energy of about 55 meV. Layers grown by atomic layer epitaxy are marked by an increased intensity of the donor-acceptor-pair band luminescence which is attributed to the enforced incorporation of carbon onto the nitrogen sublattice. The yellow luminescence is found to be a typical feature of all carbon doped layers in contrast to nominally undoped samples.

Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 335-338 ◽  
Author(s):  
Satoshi Murata ◽  
Yoshihiro Nakamura ◽  
Tomohiko Maeda ◽  
Yoko Shibata ◽  
Mina Ikuta ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Acceptor Pair ◽  
Emission Properties ◽  
Emission Efficiency ◽  
Measurement Results ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Secondary Ion ◽  
Co Doped

The dependence of donor-acceptor pair (DAP) emission properties on impurity concentrations of N and B in 6H-SiC epilayers was investigated. Doped samples were grown by closed sublimation technique, and impurity concentrations were confirmed by secondary ion mass spectrometry (SIMS). Photoluminescence (PL) measurement results indicate that p-type 6H-SiC with NA>ND had extremely low DAP emission efficiency, whereas n-type 6H-SiC with NA<ND showed intense DAP emission. Moreover, n-type 6H-SiC with high N and B concentrations exceeding 1018cm-3 is preferable for high DAP emission efficiency.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials
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