True dipole at the indium tin oxide/organic semiconductor interface

2006 ◽  
Vol 89 (26) ◽  
pp. 262110 ◽  
Author(s):  
Yow-Jon Lin ◽  
Jia-huang Hong ◽  
Yi-Chun Lien ◽  
Bei-Yuan Liu
Keyword(s):  
Tin Oxide ◽  
Organic Semiconductor ◽  
Indium Tin Oxide ◽  
Semiconductor Interface

Energy level evolution of molybdenum trioxide interlayer between indium tin oxide and organic semiconductor

2010 ◽  
Vol 96 (7) ◽  
pp. 073304 ◽  
Author(s):  
Irfan ◽  
Huanjun Ding ◽  
Yongli Gao ◽  
Do Young Kim ◽  
Jegadesan Subbiah ◽  
...  
Keyword(s):  
Energy Level ◽  
Tin Oxide ◽  
Organic Semiconductor ◽  
Indium Tin Oxide ◽  
Molybdenum Trioxide

IMPROVEMENT OF SURFACE POTENTIAL ENERGY OF INDIUM TIN OXIDE THIN FILM MODIFIED WITH ORGANIC SEMICONDUCTOR MATERIAL BASED ON PHENYL GROUP

2021 ◽  
pp. 2150043
Author(s):  
ALI KEMAL HAVARE
Keyword(s):  
Potential Energy ◽  
Surface Potential ◽  
Tin Oxide ◽  
Organic Semiconductor ◽  
Indium Tin Oxide ◽  
Phenyl Group ◽  
Semiconductor Material ◽  
Oxide Thin Film ◽  
Scanning Tunneling ◽  
Organic Semiconductor Material

This study focuses on surface characterization of modified indium tin oxide (ITO) for potential applications as anode in organic electronics devices. [4-iodophenyl]-silanetriol molecules were coated by self-assembled monolayers method on ITO surface. Kelvin Probe Microscopy, Scanning Tunneling Microcopy and X-ray Photoelectron Spectroscopy techniques were used to analyze the modified ITO surface. The results show that organic semiconductor material based on Phenyl group enhance surface morphology and increase the surface potential energy of ITO around [Formula: see text][Formula: see text]meV and contribute the tunneling current that inject from Fermi energy level of the ITO. This study includes the influence of surface interactions on electrochemical and spectral features of compounds. The results are important in developing surface structures in amorphous layers, better understanding the mechanism of creation of such structures on ITO surface.

Formation of the superconductor-semiconductor interface between Bi2Sr2CaCu2O8−x and indium-tin oxide

1995 ◽  
Vol 3 (6) ◽  
pp. 309-312
Author(s):  
A. Jukna ◽  
B. Vengalis ◽  
R. Butkute ◽  
A. Deksnys ◽  
V. Lisauskas ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Semiconductor Interface

Fan-shaped mid-infrared chiral metamaterials based on indium tin oxide and their circular dichroism

2020 ◽  
Vol 13 (4) ◽  
pp. 722-727
Author(s):  
ZHU Ye-xin ◽  
◽  
◽  
LI Ya-nan ◽  
SHI Wei-jie ◽  
...  
Keyword(s):  
Circular Dichroism ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Mid Infrared ◽  
Chiral Metamaterials ◽  
Circular Dichroïsm

Indium tin oxide/GaAs photodiodes for millimetric-wave applications

1986 ◽  
Vol 22 (23) ◽  
pp. 1266 ◽  
Author(s):  
D.G. Parker ◽  
P.G. Say
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Millimetric Wave

Indium–tin oxide film electrode as catalytic amperometric sensor for hydrogen peroxide

The Analyst ◽  
1995 ◽  
Vol 120 (10) ◽  
pp. 2579-2583 ◽  
Author(s):  
Xiaohua Cai ◽  
Božidar Ogorevc ◽  
Gabrijela Tavčar ◽  
Joseph Wang
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Amperometric Sensor ◽  
Film Electrode
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