Energy level evolution of molybdenum trioxide interlayer between indium tin oxide and organic semiconductor

2010 ◽  
Vol 96 (7) ◽  
pp. 073304 ◽  
Author(s):  
Irfan ◽  
Huanjun Ding ◽  
Yongli Gao ◽  
Do Young Kim ◽  
Jegadesan Subbiah ◽  
...  
Keyword(s):  
Energy Level ◽  
Tin Oxide ◽  
Organic Semiconductor ◽  
Indium Tin Oxide ◽  
Molybdenum Trioxide

The effect of molybdenum trioxide inter-layer between indium tin oxide (ITO) and organic semiconductor on the energy level alignment

2009 ◽  
Vol 1212 ◽  
Author(s):  
Irfan Irfan ◽  
Huanjun Ding ◽  
Yongli Gao ◽  
Do Yang Kim ◽  
Jegadesan Subbiah ◽  
...  
Keyword(s):  
Energy Level ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Molybdenum Trioxide ◽  
Ultra Violet ◽  
Photoemission Spectroscopy ◽  
Layer By Layer ◽  
Band Bending ◽  
Energy Level Alignment ◽  
In Series

AbstractWe investigated 0 to 300 Å thick stepped molybdenum trioxide (MoO3) inter-layer between in-situ oxygen plasma treated conducting indium tin oxide (ITO) and chloro-aluminum pthalocyanine (AlPc-Cl) layer-by-layer evaporated up to 228 Å, with ultra-violet photoemission spectroscopy (UPS) and inverse photoemission spectroscopy (IPES). The MoO3 inter-layers were observed to increase the surface workfunction. The workfunction increase was observed to saturate at 20 Å of MoO3 coverage. The increased surface workfunction causes hole accumulation and band bending in the subsequently deposited AlPc-Cl. A possible explanation of reduction in series resistance by the insertion of the MoO3 insulating layer is discussed based on these observations and energy level alignment.

Light-soaking issue in polymer solar cells: Photoinduced energy level alignment at the sol-gel processed metal oxide and indium tin oxide interface

2012 ◽  
Vol 111 (11) ◽  
pp. 114511 ◽  
Author(s):  
Junghwan Kim ◽  
Geunjin Kim ◽  
Youna Choi ◽  
Jongjin Lee ◽  
Sung Heum Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Energy Level ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Polymer Solar Cells ◽  
Sol Gel ◽  
Oxide Interface ◽  
Energy Level Alignment

True dipole at the indium tin oxide/organic semiconductor interface

2006 ◽  
Vol 89 (26) ◽  
pp. 262110 ◽  
Author(s):  
Yow-Jon Lin ◽  
Jia-huang Hong ◽  
Yi-Chun Lien ◽  
Bei-Yuan Liu
Keyword(s):  
Tin Oxide ◽  
Organic Semiconductor ◽  
Indium Tin Oxide ◽  
Semiconductor Interface

Energy level alignment and hole injection property of poly(9-vinylcarbazole)/indium tin oxide interface

2018 ◽  
Vol 706 ◽  
pp. 317-322 ◽  
Author(s):  
Junkyeong Jeong ◽  
Jiyeon Lee ◽  
Hyunchan Lee ◽  
Gyeongho Hyun ◽  
Soohyung Park ◽  
...  
Keyword(s):  
Energy Level ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Hole Injection ◽  
Oxide Interface ◽  
Energy Level Alignment ◽  
Injection Property

The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl- 4,4′-diamine interfaces

2008 ◽  
Vol 93 (4) ◽  
pp. 043308 ◽  
Author(s):  
Hyunbok Lee ◽  
Sang Wan Cho ◽  
Kyul Han ◽  
Pyung Eun Jeon ◽  
Chung-Nam Whang ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Molybdenum Trioxide ◽  
Hole Injection

IMPROVEMENT OF SURFACE POTENTIAL ENERGY OF INDIUM TIN OXIDE THIN FILM MODIFIED WITH ORGANIC SEMICONDUCTOR MATERIAL BASED ON PHENYL GROUP

2021 ◽  
pp. 2150043
Author(s):  
ALI KEMAL HAVARE
Keyword(s):  
Potential Energy ◽  
Surface Potential ◽  
Tin Oxide ◽  
Organic Semiconductor ◽  
Indium Tin Oxide ◽  
Phenyl Group ◽  
Semiconductor Material ◽  
Oxide Thin Film ◽  
Scanning Tunneling ◽  
Organic Semiconductor Material

This study focuses on surface characterization of modified indium tin oxide (ITO) for potential applications as anode in organic electronics devices. [4-iodophenyl]-silanetriol molecules were coated by self-assembled monolayers method on ITO surface. Kelvin Probe Microscopy, Scanning Tunneling Microcopy and X-ray Photoelectron Spectroscopy techniques were used to analyze the modified ITO surface. The results show that organic semiconductor material based on Phenyl group enhance surface morphology and increase the surface potential energy of ITO around [Formula: see text][Formula: see text]meV and contribute the tunneling current that inject from Fermi energy level of the ITO. This study includes the influence of surface interactions on electrochemical and spectral features of compounds. The results are important in developing surface structures in amorphous layers, better understanding the mechanism of creation of such structures on ITO surface.

Sign in / Sign up

Export Citation Format

Share Document