SF6∕O2 plasma effects on silicon nitride passivation of AlGaN∕GaN high electron mobility transistors

David J. Meyer; Joseph R. Flemish; Joan M. Redwing

doi:10.1063/1.2400100

SF6∕O2 plasma effects on silicon nitride passivation of AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.2400100 ◽

2006 ◽

Vol 89 (22) ◽

pp. 223523 ◽

Cited By ~ 10

Author(s):

David J. Meyer ◽

Joseph R. Flemish ◽

Joan M. Redwing

Keyword(s):

Silicon Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Plasma Effects ◽

O2 Plasma

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Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3593002 ◽

2011 ◽

Vol 29 (3) ◽

pp. 031211 ◽

Cited By ~ 8

Author(s):

Chien-Fong Lo ◽

T. S. Kang ◽

L. Liu ◽

F. Ren ◽

S. J. Pearton ◽

...

Keyword(s):

Silicon Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Blocking Voltage

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AlGaAs/InGaAs High-Electron Mobility Transistors Fabricated Using Silicon Nitride Passivation and Selective-Etching Process

Science of Advanced Materials ◽

10.1166/sam.2021.3928 ◽

2021 ◽

Vol 13 (4) ◽

pp. 638-641

Author(s):

Yu-Shyan Lin ◽

Chun-Cheng Lin

Keyword(s):

Silicon Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Current Gain ◽

High Electron ◽

High Electron Mobility ◽

Power Characteristics ◽

Electron Mobility Transistors ◽

Selective Etch ◽

Recessed Gate

AlGaAs/InGaAs high-electron mobility transistors (HEMTs) are grown by molecular beam epitaxy (MBE). The studied HEMTs use two AlAs layers as etch-stop layers in the selective-etch recessed-gate fabrication of the HEMTs. The influence of passivation using silicon nitride on HEMTs is examined. Passivation improves the dc, high-frequency, and power characteristics of AlGaAs/InGaAs HEMTs. The passivated HEMT has a maximum extrinsic transconductance of 207 mS/mm, a unity-current-gain frequency (fT) of 13 GHz, and a maximum oscillation frequency (fmax) of 26 GHz. Furthermore, the variation of dc characteristics of the passivated HEMT with temperature is reduced.

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0.12 µm Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon–Nitride-Assisted Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7934 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7934-7938 ◽

Cited By ~ 2

Author(s):

Jong-Won Lim ◽

Ho-Kyun Ahn ◽

Hong-Gu Ji ◽

Woo-Jin Chang ◽

Jae-Kyoung Mun ◽

...

Keyword(s):

Silicon Nitride ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Chemical Vapor Deposited

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Passivation Effects of 100 nm In0.4AlAs/In0.35GaAs Metamorphic High-Electron-Mobility Transistors with a Silicon Nitride Layer by Remote Plasma-Enhanced Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2341 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2341-2343 ◽

Cited By ~ 5

Author(s):

Sungwon Kim ◽

Kyoungchul Jang ◽

Gyungseon Seol ◽

Jincherl Her ◽

Kwangseok Seo

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Nitride Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation

Microelectronics Reliability ◽

10.1016/j.microrel.2017.06.057 ◽

2017 ◽

Vol 76-77 ◽

pp. 287-291 ◽

Cited By ~ 6

Author(s):

W.A. Sasangka ◽

G.J. Syaranamual ◽

Y. Gao ◽

R. I Made ◽

C.L. Gan ◽

...

Keyword(s):

Silicon Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Density ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gan On Si

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The application of polyimide/silicon nitride dual passivation to AlxGa1−xN/GaN high electron mobility transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2007.05.003 ◽

2008 ◽

Vol 48 (2) ◽

pp. 187-192 ◽

Cited By ~ 6

Author(s):

W.S. Lau ◽

S. Gunawan ◽

Joy B.H. Tan ◽

B.P. Singh

Keyword(s):

Silicon Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Cited By ~ 36

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes

IEEE Electron Device Letters ◽

10.1109/led.2020.3048009 ◽

2020 ◽

pp. 1-1

Author(s):

Chih-Yao Chang ◽

Chun-Ta Hsu ◽

Yao-Luen Shen ◽

Tian-Li Wu ◽

Wei-Hung Kuo ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Oxide Electrodes

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Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108050 ◽

2021 ◽

pp. 108050

Author(s):

Maria Glória Caño de Andrade ◽

Luis Felipe de Oliveira Bergamim ◽

Braz Baptista Júnior ◽

Carlos Roberto Nogueira ◽

Fábio Alex da Silva ◽

...

Keyword(s):

Electron Mobility ◽

Low Frequency ◽

High Electron Mobility Transistors ◽

Frequency Noise ◽

High Electron ◽

Low Frequency Noise ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22562 ◽

2021 ◽

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Jialin Cai ◽

Jun Liu ◽

Fadhel M. Ghannouchi

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Parameter Extraction ◽

Extraction Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors

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