The application of polyimide/silicon nitride dual passivation to AlxGa1−xN/GaN high electron mobility transistors

2008 ◽  
Vol 48 (2) ◽  
pp. 187-192 ◽  
Author(s):  
W.S. Lau ◽  
S. Gunawan ◽  
Joy B.H. Tan ◽  
B.P. Singh
Keyword(s):  
Silicon Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AlGaAs/InGaAs High-Electron Mobility Transistors Fabricated Using Silicon Nitride Passivation and Selective-Etching Process

2021 ◽  
Vol 13 (4) ◽  
pp. 638-641
Author(s):  
Yu-Shyan Lin ◽  
Chun-Cheng Lin
Keyword(s):  
Silicon Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Current Gain ◽  
High Electron ◽  
High Electron Mobility ◽  
Power Characteristics ◽  
Electron Mobility Transistors ◽  
Selective Etch ◽  
Recessed Gate

AlGaAs/InGaAs high-electron mobility transistors (HEMTs) are grown by molecular beam epitaxy (MBE). The studied HEMTs use two AlAs layers as etch-stop layers in the selective-etch recessed-gate fabrication of the HEMTs. The influence of passivation using silicon nitride on HEMTs is examined. Passivation improves the dc, high-frequency, and power characteristics of AlGaAs/InGaAs HEMTs. The passivated HEMT has a maximum extrinsic transconductance of 207 mS/mm, a unity-current-gain frequency (fT) of 13 GHz, and a maximum oscillation frequency (fmax) of 26 GHz. Furthermore, the variation of dc characteristics of the passivated HEMT with temperature is reduced.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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