High filling fraction gallium phosphide inverse opals by atomic layer deposition

2006 ◽  
Vol 89 (21) ◽  
pp. 211102 ◽  
Author(s):  
E. Graugnard ◽  
V. Chawla ◽  
D. Lorang ◽  
C. J. Summers
2005 ◽  
Vol 17 (8) ◽  
pp. 1010-1013 ◽  
Author(s):  
J. S. King ◽  
E. Graugnard ◽  
C. J. Summers

2003 ◽  
Vol 83 (13) ◽  
pp. 2566-2568 ◽  
Author(s):  
J. S. King ◽  
C. W. Neff ◽  
C. J. Summers ◽  
W. Park ◽  
S. Blomquist ◽  
...  

2021 ◽  
Author(s):  
Sara Rose Kuraitis

Atomic layer deposition (ALD) is a vapor deposition technique for synthesizing thin films with nanometer thickness control. ALD films are deposited on a substrate surface in a cyclic layer-by-layer fashion utilizing alternating doses of highly reactive chemical precursors. Precursors are selected to undergo self-limiting chemical reactions with the surface, and desired film thickness is achieved by varying the number of ALD cycles accordingly. Optimization of ALD process parameters and precursor chemistry enables conformal coating of arbitrary substrate geometries, including high aspect ratio features such as trenches. In the decades since its introduction, ALD has been used for applications across many industries, including semiconductor device manufacturing, emerging battery technologies, and optoelectronics. In this work, I present investigation of two previously reported chemistries for ALD of gallium phosphide (GaP), as well as improvements made to a custom ALD reactor to facilitate better process control and characterization. I also present a new process for thermal ALD of sodium fluoride (NaF), with potential applications in electrode coatings for sodium-ion batteries. To my knowledge, this is the first report of NaF ALD. Finally, I summarize obstacles which may be addressed in future studies that build upon this work.


2003 ◽  
Vol 797 ◽  
Author(s):  
Jeffrey S. King ◽  
Curtis W. Neff ◽  
Dawn L. Heineman ◽  
Elton D. Graugnard ◽  
Christopher J. Summers

ABSTRACTWe report a technique for the formation of infiltrated and inverse opal structures that produces high quality, low porosity conformal material structures. ZnS:Mn and TiO2 were deposited within the void space of an opal lattice by atomic layer deposition. The resulting structures were etched with HF to remove the silica opal template. Infiltrated and inverse opals were characterized by SEM, XRD, and transmission/reflection spectroscopy. The reflectance spectra exhibited features corresponding to strong low and high order photonic band gaps in the (111) direction (γ-L). In addition, deliberate partial infiltrations and multi-layered inverse opals have been formed. The effectiveness of a post-deposition heat treatment for converting TiO2 films to rutile was also studied.


2013 ◽  
Vol 789 ◽  
pp. 3-7 ◽  
Author(s):  
Siva Krishna Karuturi ◽  
Li Jun Liu ◽  
Liap Tat Su ◽  
Wen Bin Niu ◽  
Alfred Ling Yoong Tok

Atomic layer deposition (ALD) technique shows superior application in the fabrication of TiO2 inverse opals (IO), compared with conventional infiltration methods. In the present report, TiO2 IO structures were infiltrated by ALD method in a continuous-flow and internally developed stop-flow process, respectively. The corresponding optical and optoelectrical properties of TiO2 IO structures were investigated. The prepared uniform IO structure of 288 nm was used as a photoanode for dye-sensitized solar cells. An efficiency of 2.22% was achieved, which was much higher than that of prepared by conventional solution-infiltration method. It is indicated that ALD method is an effective approach for fabricating TiO2 IO photoanode.


Small ◽  
2009 ◽  
Vol 5 (3) ◽  
pp. 336-340 ◽  
Author(s):  
Ivano Alessandri ◽  
Marcello Zucca ◽  
Matteo Ferroni ◽  
Elza Bontempi ◽  
Laura E. Depero ◽  
...  

2018 ◽  
Vol 454 ◽  
pp. 112-120 ◽  
Author(s):  
Jie Long ◽  
Ming Fu ◽  
Caixia Li ◽  
Cuifeng Sun ◽  
Dawei He ◽  
...  

Nano Letters ◽  
2003 ◽  
Vol 3 (9) ◽  
pp. 1293-1297 ◽  
Author(s):  
Alessandro Rugge ◽  
Jill S. Becker ◽  
Roy G. Gordon ◽  
Sarah H. Tolbert

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