Tailoring the Pore Size and Architecture of CeO2/TiO2Core/Shell Inverse Opals by Atomic Layer Deposition

Small ◽  
2009 ◽  
Vol 5 (3) ◽  
pp. 336-340 ◽  
Author(s):  
Ivano Alessandri ◽  
Marcello Zucca ◽  
Matteo Ferroni ◽  
Elza Bontempi ◽  
Laura E. Depero ◽  
...  
2005 ◽  
Vol 17 (8) ◽  
pp. 1010-1013 ◽  
Author(s):  
J. S. King ◽  
E. Graugnard ◽  
C. J. Summers

2003 ◽  
Vol 797 ◽  
Author(s):  
Jeffrey S. King ◽  
Curtis W. Neff ◽  
Dawn L. Heineman ◽  
Elton D. Graugnard ◽  
Christopher J. Summers

ABSTRACTWe report a technique for the formation of infiltrated and inverse opal structures that produces high quality, low porosity conformal material structures. ZnS:Mn and TiO2 were deposited within the void space of an opal lattice by atomic layer deposition. The resulting structures were etched with HF to remove the silica opal template. Infiltrated and inverse opals were characterized by SEM, XRD, and transmission/reflection spectroscopy. The reflectance spectra exhibited features corresponding to strong low and high order photonic band gaps in the (111) direction (γ-L). In addition, deliberate partial infiltrations and multi-layered inverse opals have been formed. The effectiveness of a post-deposition heat treatment for converting TiO2 films to rutile was also studied.


2006 ◽  
Vol 89 (21) ◽  
pp. 211102 ◽  
Author(s):  
E. Graugnard ◽  
V. Chawla ◽  
D. Lorang ◽  
C. J. Summers

2013 ◽  
Vol 789 ◽  
pp. 3-7 ◽  
Author(s):  
Siva Krishna Karuturi ◽  
Li Jun Liu ◽  
Liap Tat Su ◽  
Wen Bin Niu ◽  
Alfred Ling Yoong Tok

Atomic layer deposition (ALD) technique shows superior application in the fabrication of TiO2 inverse opals (IO), compared with conventional infiltration methods. In the present report, TiO2 IO structures were infiltrated by ALD method in a continuous-flow and internally developed stop-flow process, respectively. The corresponding optical and optoelectrical properties of TiO2 IO structures were investigated. The prepared uniform IO structure of 288 nm was used as a photoanode for dye-sensitized solar cells. An efficiency of 2.22% was achieved, which was much higher than that of prepared by conventional solution-infiltration method. It is indicated that ALD method is an effective approach for fabricating TiO2 IO photoanode.


2012 ◽  
Vol 24 (11) ◽  
pp. 1992-1994 ◽  
Author(s):  
Jolien Dendooven ◽  
Bart Goris ◽  
Kilian Devloo-Casier ◽  
Elisabeth Levrau ◽  
Ellen Biermans ◽  
...  

2018 ◽  
Vol 30 (14) ◽  
pp. 4748-4754 ◽  
Author(s):  
Changdeuck Bae ◽  
Hyunchul Kim ◽  
Eunsoo Kim ◽  
Hyung Gyu Park ◽  
Hyunjung Shin

2008 ◽  
Author(s):  
Leonora Velleman ◽  
Gerry Traini ◽  
Peter J. Evans ◽  
Armand Atanacio ◽  
Joe G. Shapter ◽  
...  

2018 ◽  
Vol 454 ◽  
pp. 112-120 ◽  
Author(s):  
Jie Long ◽  
Ming Fu ◽  
Caixia Li ◽  
Cuifeng Sun ◽  
Dawei He ◽  
...  

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