scholarly journals Low-operating-voltage pentacene field-effect transistor with a high-dielectric-constant polymeric gate dielectric

2006 ◽  
Vol 89 (18) ◽  
pp. 183516 ◽  
Author(s):  
Se Hyun Kim ◽  
Sang Yoon Yang ◽  
Kwonwoo Shin ◽  
Hayoung Jeon ◽  
Jong Won Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Operating Voltage ◽  
Effect Transistor ◽  
High Dielectric

Rubrene Single-crystal Organic Field Effect Transistor with Laser Ablated BaTiO3 Epitaxial Growth Thin-film as High-k Insulator

2006 ◽  
Vol 965 ◽  
Author(s):  
Nobuya Hiroshiba ◽  
Ryotaro Kumashiro ◽  
Taishi Takenobu ◽  
Naoya Komatsu ◽  
Yusuke Suto ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Dielectric Constant ◽  
Gate Insulator ◽  
High K ◽  
High Carrier ◽  
Effect Transistor ◽  
High Dielectric

ABSTRACTHigh quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

Simulation of a Simplified Design for a Nanoscale Metal-Oxide Field Effect Transistor

2000 ◽  
Vol 623 ◽  
Author(s):  
D. M. Newns ◽  
W. M. Donath ◽  
P.C. Pattnaik
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Present Model ◽  
High Dielectric Constant ◽  
Transport Model ◽  
Gate Insulator ◽  
Ring Oscillator ◽  
Effect Transistor ◽  
High Dielectric

AbstractWe describe simulations on a simplified design for a metal-oxide nanoscale Field Effect Transistor (FET). The device features an oxide channel with a high dielectric constant ferroelectric as the gate insulator. In the present model, the gate and source/drain electrodes are unconventionally placed on opposite sides of the channel. Simulations are quantum mechanical and are based on a simplified transport model. Results on a 10 nm. channel device show adequate conductance and ON/OFF ratio, while simulation of a ring oscillator yields an estimated device switching time of 300 fs..

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