High-performance, low-operating voltage, and solution-processable organic field-effect transistor with silk fibroin as the gate dielectric

2014 ◽  
Vol 104 (2) ◽  
pp. 023302 ◽  
Author(s):  
Leilei Shi ◽  
Xinjun Xu ◽  
Mingchao Ma ◽  
Lidong Li
Keyword(s):  
Silk Fibroin ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Operating Voltage ◽  
Organic Field Effect Transistor ◽  
Effect Transistor ◽  
Solution Processable

scholarly journals Zn(ii) and Cu(ii) complexes of a new thiophene-based salphen-type ligand: solution-processable high-performance field-effect transistor materials

2014 ◽  
Vol 50 (53) ◽  
pp. 7036-7039 ◽  
Author(s):  
Ashish K. Asatkar ◽  
Satyaprasad P. Senanayak ◽  
Anjan Bedi ◽  
Snigdha Panda ◽  
K. S. Narayan ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Solution Processed ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Organic field-effect transistor (OFET) devices based on solution-processed Cu(ii) and Zn(ii) complexes of a new thiophene-based salphen-type ligand exhibited high p-type mobilities (up to 1.5 cm2V−1s−1).

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami
Keyword(s):  
Optimal Design ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Ultra Low Power ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

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