Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well

Author(s):  
Lifang Xu ◽  
D. Patel ◽  
C.S. Menoni ◽  
Jeng-ya Yeh ◽  
J. T. Huang ◽  
...  
2012 ◽  
Vol 26 (23) ◽  
pp. 1250129
Author(s):  
M. SOLAIMANI ◽  
M. IZADIFARD ◽  
H. ARABSHAHI ◽  
R. SARKARDEI

In this work, we have studied some computational aspects of a Monte Carlo method applied to an exciton which is confined in an AlGaAs/GaAs single quantum well. The computational pseudo-code and effect of its computational parameters like number of the Monte Carlo sampling points on a physical quantity like exciton binding energy are investigated. Then the CPU time under the change of such computational parameters are calculated. Finally, the exciton binding energy and errors of different methods of approximating the effective two dimensional coulomb potential for these systems are compared.


2006 ◽  
Vol 89 (17) ◽  
pp. 171112 ◽  
Author(s):  
LiFang Xu ◽  
D. Patel ◽  
C. S. Menoni ◽  
J. Y. Yeh ◽  
L. J. Mawst ◽  
...  

1991 ◽  
Vol 240 ◽  
Author(s):  
M. O. Manasreh ◽  
Godfrey Gumbs ◽  
C. Zhang ◽  
I. Lo ◽  
C. A. Bozada ◽  
...  

ABSTRACTThe 2-dimensional electron gas (2DEG) in an Al0.6Ga0.4Sb/InAs single quantum well (SQW) is studied using cyclotron resonance (CR) and Shubnikov - de Haas (SdH) techniques. SdH results show spin-splitting in Landau levels at magnetic field strength (B) as low as 1.5T. The effective mass (m*) of the 2DEG was obtained from the peak positions of the CR transmission spectra. The results exhibit oscillatory behavior as a function of B. The m* value extracted from die temperature dependence of the SdH oscillations is in good agreement with the average value of m* obtained from CR measurements. The effective mass is calculated as a function of B using an electron self-energy model based on the Hartree-Fock approximation. The calculated m* values also show oscillatory behavior similar to that of the measured CR m*. Both experiment and theory show that m* maxima are shifted from the integral values (both odd and even) of the filling factors.


1995 ◽  
Vol 78 (10) ◽  
pp. 6327-6329 ◽  
Author(s):  
Hosun Lee ◽  
E. D. Jones ◽  
S. R. Kurtz ◽  
T. Schmiedel ◽  
D. C. Houghton ◽  
...  

2010 ◽  
Vol 24 (18) ◽  
pp. 3501-3511
Author(s):  
MENG-DONG HE ◽  
LING-LING WANG ◽  
WEI-QING HUANG ◽  
BING-SOU ZOU ◽  
KE-QIU CHEN

The characteristics of the localized Wannier exciton in defect layer (GaAs) embedded between two semi-infinite superlattices (GaAs/Al x Ga 1-x As ) are investigated theoretically using a variational approach. It can be clearly seen the exciton changes in character between three- and quasi-two-dimensional states from the variation of exciton binding energy, in-plane radius, and probability in the superlattices (SLs) growth direction. We find that the extensions of exciton in directions both parallel and perpendicular to the interface of SLs almost approach their minimums as the exciton binding energy reaches peak value at a certain defect width. Our results show that the binding energy of the ground exciton state is sensitive to Al concentration x in Al x Ga 1-x As and thicknesses of the constituent layers. The comparison between excitonic behavior in structural defect SLs and single quantum well is made.


1993 ◽  
Vol 175 (3-4) ◽  
pp. 225-232 ◽  
Author(s):  
Feng-Qi Zhao ◽  
Xu Wang ◽  
Xi-Xia Liang

2018 ◽  
Vol 32 (04) ◽  
pp. 1850032 ◽  
Author(s):  
Monalisa Panda ◽  
Tapaswini Das ◽  
B. K. Panda

The electronic states in the laser-dressed hexagonal and cubic Al[Formula: see text]Ga[Formula: see text]N/GaN single quantum wells are calculated using the effective mass equation. The hexagonal single quantum well contains an internal electric field due to spontaneous and piezoelectric polarizations. The effective mass equation is solved by the finite difference method. The energy levels in both cubic and hexagonal laser-dressed wells are found to increase with increase in laser dressing as the effective well widths in both the wells increase. The intersubband energy spacing between first excited state and ground state increases in the cubic quantum well, whereas it decreases in the hexagonal well due to the presence of internal electric field in it. Using the compact density matrix method with iterative procedure, first-, second- and third-order nonlinear optical susceptibilities in the laser-dressed quantum well are calculated taking only two levels. While the susceptibilities in the hexagonal well are found to get red shifted, the susceptibilities in the cubic well are blue shifted.


1992 ◽  
Vol 11 (4) ◽  
pp. 423-427 ◽  
Author(s):  
M.O. Manasreh ◽  
Godfrey Gumbs ◽  
C. Zhang ◽  
C.E. Stutz ◽  
K.R. Evans ◽  
...  

2017 ◽  
Vol 31 (08) ◽  
pp. 1750050 ◽  
Author(s):  
A. Anitha ◽  
M. Arulmozhi

Binding energies of the heavy hole and light hole exciton in a quantum well with Pöschl–Teller (PT) potential composed of GaAs have been studied variationally within effective mass approximation. The effects of pressure and temperature on exciton binding energy are analyzed individually and also simultaneously for symmetric and asymmetric configuration of the well. The results show that exciton binding energy (i) decreases as the well width increases, (ii) increases with pressure and (iii) decreases with temperature. Simultaneous effects of these perturbations lead to more binding of the exciton. The results are compared with the existing literature.


Sign in / Sign up

Export Citation Format

Share Document