Simulation of polarization and butterfly hysteresis loops in bismuth layer-structured ferroelectric thin films

2006 ◽  
Vol 100 (9) ◽  
pp. 094101 ◽  
Author(s):  
Z. Ye ◽  
M. H. Tang ◽  
C. P. Cheng ◽  
Y. C. Zhou ◽  
X. J. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films

Reactive ion etching damage to the electrical properties of ferroelectric thin films

1998 ◽  
Vol 13 (2) ◽  
pp. 362-367 ◽  
Author(s):  
W. Pan ◽  
C. L. Thio ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Etching Time ◽  
Ion Etching ◽  
Degradation Properties ◽  
Ferroelectric Capacitors

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

A model for the polarization hysteresis loops of the perovskite-type ferroelectric thin films

2007 ◽  
Vol 91 (14) ◽  
pp. 142902 ◽  
Author(s):  
Feng Yang ◽  
M. H. Tang ◽  
Y. C. Zhou ◽  
X. J. Zheng ◽  
F. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Perovskite Type

scholarly journals Current and surface charge modified hysteresis loops in ferroelectric thin films

2015 ◽  
Vol 118 (7) ◽  
pp. 072013 ◽  
Author(s):  
Nina Balke ◽  
Stephen Jesse ◽  
Qian Li ◽  
Petro Maksymovych ◽  
M. Baris Okatan ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Charge ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films

Pulsed hysteresis loops on ferroelectric thin films

1999 ◽  
Vol 32 (17) ◽  
pp. L79-L82 ◽  
Author(s):  
C Alemany ◽  
R Jiménez ◽  
J Revilla ◽  
J Mendiola ◽  
M L Calzada
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films

Nanoscale Scanning Force Imaging of Polarization Phenomena in Ferroelectric Thin Films

MRS Bulletin ◽  
1998 ◽  
Vol 23 (1) ◽  
pp. 33-42 ◽  
Author(s):  
O. Auciello ◽  
A. Gruverman ◽  
H. Tokumoto ◽  
S.A. Prakash ◽  
S. Aggarwal ◽  
...  
Keyword(s):  
Thin Films ◽  
High Speed ◽  
Science And Technology ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Thin Films ◽  
Exact Nature ◽  
Electrical Measurements ◽  
Ferroelectric Layer ◽  
Polarization Phenomena

The science and technology of ferroelectric thin films is currently attracting worldwide attention because of its application to a new generation of novel devices. Prime, among these applications are nonvolatile ferroelectric random-access memories (NVFRAMs), which have high speed and extended endurance. The core of an NVFRAM is a capacitor with a ferroelectric film sandwiched between two electrode layers. The polarization of the ferroelectric layer in two possible opposite directions, upon application of an electric field between the two electrodes, provides the logic “1” and “0” states needed for binary-code memory. In spite of the advances in the science and technology of ferroelectric thin films and their integration into ferroelectric capacitors, some materials-related integration strategies as well as manufacturability issues have delayed commercialization of NVFRAMs. High-density memories require storage elements that approach submicron lateral dimensions. Thus, improved understanding of the materials properties and polarization phenomena is needed in conjunction with the development of new characterization tools that can enable such an understanding. For example, a fundamental issue in ferroelectric thin-film capacitors is the exact nature of the complex domain structure in the polarizable ferroelectric layer and its dynamics under high-speed switching conditions. The miniaturization of NVFRAMs requires understanding of granularity in polarization reversal dynamics, fatigue, and retention characteristics. In this respect, theoretical models and electrical measurements (e.g., polarization hysteresis loops and transient currents) have provided substantial insights into the nature of the switching processes. However, the models (phenomenological in nature) and the electrical measurements provide only a global or macroscopic view of the switching process.

Platinum-Accelerated Phase Transition in Bismuth-Based Layer-Structured Ferroelectric Thin Films

2002 ◽  
Vol 748 ◽  
Author(s):  
Kazumi Kato ◽  
Kazuyuki Suzuki ◽  
Desheng Fu ◽  
Kaori Nishizawa ◽  
Takeshi Miki
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Axis Orientation ◽  
Ferroelectric Perovskite

ABSTRACTThe phase transition of non ferroelectric pyrochlore to ferroelectric perovskite in CaBi4Ti4O15 thin films depended on matching of the atomic arrangements in platinum bottom electrodes to the Ca-Bi-Ti-O thin films. CaBi4Ti4O15 thin films crystallized on (200)-oriented platinum at 650°C showed c-axis orientation. In contrast, thin films randomly crystallized on highly crystalline (111)-oriented platinum at the same temperature contained pyrochlore phase and showed P-V hysteresis loops. The ferroelectric properties improved with the degrees of (h00) orientation.

SrBi2Nb2O9 ferroelectric thin films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-225-Pr9-228
Author(s):  
J. H. Yi ◽  
P. Thomas ◽  
M. Manier ◽  
J. P. Mercurio ◽  
I. Jauberteau ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films
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