Asymmetric hysteresis loops and smearing of the dielectric anomaly at the transition temperature due to space charges in ferroelectric thin films

2010 ◽  
Vol 108 (3) ◽  
pp. 034105 ◽  
Author(s):  
I. B. Misirlioglu ◽  
M. B. Okatan ◽  
S. P. Alpay
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Hysteresis Loops ◽  
Dielectric Anomaly ◽  
Ferroelectric Thin Films ◽  
Space Charges

Electrical Properties of Polymer Composites

2005 ◽  
Vol 482 ◽  
pp. 391-394
Author(s):  
T. Podgrabinski ◽  
Petr Slepička ◽  
V. Rybka ◽  
Václav Švorčík
Keyword(s):  
Thin Films ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Electrical Properties ◽  
Hysteresis Loops ◽  
Temperature Hysteresis ◽  
Electrical Field ◽  
Measured Polarization ◽  
Pmma Solution

Permittivity of about 1 µm thin films prepared from polymethylmetactrylate (PMMA) solution doped with 20 % of diphenyl sulfoxide was studied. Permittivity of the films was measured as a function of the temperature. The measurement of the dependence of polarization on electrical field was performed using a standard Sawyer-Tower circuit. The presence of the dopant increases the composite permittivity namely above the PMMA glass transition temperature. Hysteresis loops observed on the measured polarization vs. electrical field dependence indicate easier and more pronounced polarizability of the composite comparing to pristine PMMA.

Reactive ion etching damage to the electrical properties of ferroelectric thin films

1998 ◽  
Vol 13 (2) ◽  
pp. 362-367 ◽  
Author(s):  
W. Pan ◽  
C. L. Thio ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Etching Time ◽  
Ion Etching ◽  
Degradation Properties ◽  
Ferroelectric Capacitors

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

A model for the polarization hysteresis loops of the perovskite-type ferroelectric thin films

2007 ◽  
Vol 91 (14) ◽  
pp. 142902 ◽  
Author(s):  
Feng Yang ◽  
M. H. Tang ◽  
Y. C. Zhou ◽  
X. J. Zheng ◽  
F. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Perovskite Type

scholarly journals Current and surface charge modified hysteresis loops in ferroelectric thin films

2015 ◽  
Vol 118 (7) ◽  
pp. 072013 ◽  
Author(s):  
Nina Balke ◽  
Stephen Jesse ◽  
Qian Li ◽  
Petro Maksymovych ◽  
M. Baris Okatan ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Charge ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films

Pulsed hysteresis loops on ferroelectric thin films

1999 ◽  
Vol 32 (17) ◽  
pp. L79-L82 ◽  
Author(s):  
C Alemany ◽  
R Jiménez ◽  
J Revilla ◽  
J Mendiola ◽  
M L Calzada
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films

THICKNESS DEPENDENCE OF THE COERCIVE FIELD IN FERROELECTRIC THIN FILMS

2006 ◽  
Vol 20 (22) ◽  
pp. 3223-3231
Author(s):  
ZHAN-NING HU ◽  
V. C. LO
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Nearest Neighbor ◽  
Dipole Moments ◽  
Ferroelectric Thin Films ◽  
Thickness Dependence ◽  
Experimental Result ◽  
Space Charges ◽  
Domain Boundaries ◽  
Similar Report

By considering the effects of the space charges and domain boundaries in ferroelectric thin films, the thickness dependence of coercive field (Ec) is numerically simulated based on the four-state Potts model with the nearest-neighbor interactions between dipole moments. For large thickness, experimental results where Ec decreases with thickness can be produced from our Monte-Carlo simulation. On the other hand, when the thickness is very small, our simulation gets that Ec increases with thickness by the study of the polarization switching in the film. This gives an explanation of the experimental result by Zhu et al. in J. Appl. Phys.83, 1 (1998) for SBT-BTN film, and a similar report by Bune et al. in Nature391, 874 (1998) for the crystalline film. The critical temperature of the thin film is also discussed.

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