scholarly journals Nanosecond-range imprint and retention characterized from polarization-voltage hysteresis loops in insulating or leaky ferroelectric thin films

2011 ◽  
Vol 99 (14) ◽  
pp. 142905 ◽  
Author(s):  
A. Q. Jiang ◽  
X. B. Liu ◽  
Q. Zhang
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Polarization Voltage ◽  
Nanosecond Range ◽  
Voltage Hysteresis

Reactive ion etching damage to the electrical properties of ferroelectric thin films

1998 ◽  
Vol 13 (2) ◽  
pp. 362-367 ◽  
Author(s):  
W. Pan ◽  
C. L. Thio ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Etching Time ◽  
Ion Etching ◽  
Degradation Properties ◽  
Ferroelectric Capacitors

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

A model for the polarization hysteresis loops of the perovskite-type ferroelectric thin films

2007 ◽  
Vol 91 (14) ◽  
pp. 142902 ◽  
Author(s):  
Feng Yang ◽  
M. H. Tang ◽  
Y. C. Zhou ◽  
X. J. Zheng ◽  
F. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Perovskite Type

scholarly journals Current and surface charge modified hysteresis loops in ferroelectric thin films

2015 ◽  
Vol 118 (7) ◽  
pp. 072013 ◽  
Author(s):  
Nina Balke ◽  
Stephen Jesse ◽  
Qian Li ◽  
Petro Maksymovych ◽  
M. Baris Okatan ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Charge ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films

Reliability of the Properties of (Pb,La)(Zr,Ti)O3 Capacitors with Non–noble Metal Oxide Electrodes stored in an H2 Atmosphere

MRS Advances ◽  
2016 ◽  
Vol 1 (5) ◽  
pp. 369-374 ◽  
Author(s):  
Yoko Takada ◽  
Naoki Okamoto ◽  
Takeyasu Saito ◽  
Kazuo Kondo ◽  
Takeshi Yoshimura ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Metal Oxide ◽  
Noble Metal ◽  
Remnant Polarization ◽  
Ferroelectric Properties ◽  
Time Of Flight ◽  
Hysteresis Loops ◽  
Polarization Voltage ◽  
Oxide Electrodes ◽  
Voltage Hysteresis

ABSTRACTWe fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with Sn:In2O3 (ITO) or Pt top electrodes and investigated the ferroelectric properties of these PLZT capacitors. The shape of polarization–voltage hysteresis loops was essentially unchanged and the decrease in the remnant polarization of the ITO/PLZT/Pt capacitors was smaller than that of the Pt/PLZT/Pt capacitors after annealing with 3% D2 (in N2) at 200°C and 1 Torr (i.e., FGAD). Time of flight secondary mass spectrometry revealed that the D atoms were incorporated into the PLZT film of the Pt/PLZT/Pt capacitors after 3% D2 annealing, resulting in a decrease in the ferroelectric properties. In comparison, no D ion signal was detected in the PLZT film after FGAD for ITO/PLZT/Pt capacitors.

Pulsed hysteresis loops on ferroelectric thin films

1999 ◽  
Vol 32 (17) ◽  
pp. L79-L82 ◽  
Author(s):  
C Alemany ◽  
R Jiménez ◽  
J Revilla ◽  
J Mendiola ◽  
M L Calzada
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films

Polarization and Properties of Laminated Fluoropolymer Films

2011 ◽  
Vol 687 ◽  
pp. 359-365
Author(s):  
G. Cao ◽  
Xiao Qing Zhang ◽  
Z. Sun ◽  
Ke Xing Lou ◽  
Z. Xia
Keyword(s):  
Resonance Frequency ◽  
Applied Voltage ◽  
Hysteresis Loops ◽  
Polarization Voltage ◽  
Fusion Bonding ◽  
Young’S Moduli ◽  
Dielectric Resonance ◽  
Void Structure ◽  
Voltage Hysteresis ◽  
Fluoropolymer Films

Laminated fluoropolymer films with regular void structure, fabricated by using a process consisting of the patterning and fusion bonding steps, are polarized to be piezoelectric. The influence of the applied voltage on the piezoelectric d33 coefficient is investigated. The measurements of ferroelectric-like polarization-voltage hysteresis loops are taken to further understand the capability of polarization in the laminated films. The compressive Young’s moduli of the films are determined from the dielectric resonance spectra. The results show that the laminated fluoropolymer films are piezoelectric after proper charging. The maximum d33 coefficients of the five-layer laminated piezoelectrets are achieved at the applied voltage of 5 kV. The remnant charge density of 0.3 mC/m2 is obtained from the polarization-voltage hysteresis loop at a bias voltage of 4 kV. The measured anti-resonance frequency and calculated compressive Young’s modulus for the five-layer laminated films are 112 kHz and 0.48 MPa, respectively.

Sign in / Sign up

Export Citation Format

Share Document