Vapor-liquid-solid growth of silicon nanowires by chemical vapor deposition on implanted templates

2006 ◽  
Vol 100 (8) ◽  
pp. 084323 ◽  
Author(s):  
S. Christiansen ◽  
R. Schneider ◽  
R. Scholz ◽  
U. Gösele ◽  
Th. Stelzner ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
J. Su ◽  
M. Gherasimova ◽  
G. Cui ◽  
J. Han ◽  
S. Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mesoporous Molecular Sieves ◽  
Organic Chemical ◽  
Vapor Liquid Solid ◽  
Metal Organic ◽  
Vls Growth ◽  
Organic Chemical Vapor Deposition ◽  
Vapor Liquid

ABSTRACTWe report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

Vapor-liquid-solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with Pt-Si alloy flux and X-ray topography analysis of its dislocation propagation behaviors

CrystEngComm ◽  
2021 ◽  
Author(s):  
Naoki Sannodo ◽  
Tomohisa Kato ◽  
Yoshiyuki Yonezawa ◽  
Kazutoshi Kojima ◽  
Y. Matsumoto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Homoepitaxial Growth ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Pt Alloy ◽  
Sic Films ◽  
Vapor Liquid

A vapor-liquid-solid (VLS) mechanism has been successfully applied to homoepitaxial growth of 4H-SiC films in chemical vapor deposition (CVD), the key to which is the use of a Si-Pt alloy...

Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition

2011 ◽  
Vol 50 (10R) ◽  
pp. 105002 ◽  
Author(s):  
Marolop Simanullang ◽  
Koichi Usami ◽  
Tetsuo Kodera ◽  
Ken Uchida ◽  
Shunri Oda
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Germanium Nanowires ◽  
Vapor Liquid

scholarly journals Microspheres for the Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Arancha Gómez-Martínez ◽  
Francisco Márquez ◽  
Eduardo Elizalde ◽  
Carmen Morant
Keyword(s):  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Gold Catalyst ◽  
Chemical Vapor ◽  
Carbon Microspheres ◽  
Vapor Liquid Solid ◽  
Thermal Chemical Vapor Deposition ◽  
Silicon Source ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Silicon nanowires have been synthesized by a simple process using a suitable support containing silica and carbon microspheres. Nanowires were grown by thermal chemical vapor deposition via a vapor-liquid-solid mechanism with only the substrate as silicon source. The curved surface of the microsized spheres allows arranging the gold catalyst as nanoparticles with appropriate dimensions to catalyze the growth of nanowires. The resulting material is composed of the microspheres with the silicon nanowires attached on their surface.

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