Vapor-liquid-solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with Pt-Si alloy flux and X-ray topography analysis of its dislocation propagation behaviors

CrystEngComm ◽  
2021 ◽  
Author(s):  
Naoki Sannodo ◽  
Tomohisa Kato ◽  
Yoshiyuki Yonezawa ◽  
Kazutoshi Kojima ◽  
Y. Matsumoto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Homoepitaxial Growth ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Pt Alloy ◽  
Sic Films ◽  
Vapor Liquid

A vapor-liquid-solid (VLS) mechanism has been successfully applied to homoepitaxial growth of 4H-SiC films in chemical vapor deposition (CVD), the key to which is the use of a Si-Pt alloy...

Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
J. Su ◽  
M. Gherasimova ◽  
G. Cui ◽  
J. Han ◽  
S. Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mesoporous Molecular Sieves ◽  
Organic Chemical ◽  
Vapor Liquid Solid ◽  
Metal Organic ◽  
Vls Growth ◽  
Organic Chemical Vapor Deposition ◽  
Vapor Liquid

ABSTRACTWe report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

Chemical vapor deposition of single‐crystal films of cubic SiC on patterned Si substrates

1989 ◽  
Vol 55 (15) ◽  
pp. 1522-1524 ◽  
Author(s):  
Mitsuhiro Shigeta ◽  
Yoshihisa Fujii ◽  
Katsuki Furukawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrates ◽  
Single Crystal Films ◽  
Crystal Films

Vapor-liquid-solid growth of silicon nanowires by chemical vapor deposition on implanted templates

2006 ◽  
Vol 100 (8) ◽  
pp. 084323 ◽  
Author(s):  
S. Christiansen ◽  
R. Schneider ◽  
R. Scholz ◽  
U. Gösele ◽  
Th. Stelzner ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition

2011 ◽  
Vol 50 (10R) ◽  
pp. 105002 ◽  
Author(s):  
Marolop Simanullang ◽  
Koichi Usami ◽  
Tetsuo Kodera ◽  
Ken Uchida ◽  
Shunri Oda
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Germanium Nanowires ◽  
Vapor Liquid
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