A Vapor-Liquid-Solid Model for Chemical Vapor Deposition Growth of Carbon Nanotubes

2007 ◽  
Vol 7 (4) ◽  
pp. 1494-1504 ◽  
Author(s):  
Kaili Jiang ◽  
Chen Feng ◽  
Kai Liu ◽  
Shoushan Fan
2004 ◽  
Vol 831 ◽  
Author(s):  
J. Su ◽  
M. Gherasimova ◽  
G. Cui ◽  
J. Han ◽  
S. Lim ◽  
...  

ABSTRACTWe report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.


2012 ◽  
Vol 112 (3) ◽  
pp. 034904 ◽  
Author(s):  
Yoeri van de Burgt ◽  
Yves Bellouard ◽  
Rajesh Mandamparambil ◽  
Miro Haluska ◽  
Andreas Dietzel

Nano Letters ◽  
2009 ◽  
Vol 9 (5) ◽  
pp. 1806-1811 ◽  
Author(s):  
Matthew S. Marcus ◽  
Jason M. Simmons ◽  
Sarah E. Baker ◽  
Robert J. Hamers ◽  
Mark A. Eriksson

CrystEngComm ◽  
2021 ◽  
Author(s):  
Naoki Sannodo ◽  
Tomohisa Kato ◽  
Yoshiyuki Yonezawa ◽  
Kazutoshi Kojima ◽  
Y. Matsumoto

A vapor-liquid-solid (VLS) mechanism has been successfully applied to homoepitaxial growth of 4H-SiC films in chemical vapor deposition (CVD), the key to which is the use of a Si-Pt alloy...


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