Tuning of the electronic properties of self-assembled InAs∕InP(001) quantum dots using grown-in defect mediated intermixing

2006 ◽  
Vol 89 (13) ◽  
pp. 131905 ◽  
Author(s):  
C. Dion ◽  
P. J. Poole ◽  
S. Raymond ◽  
P. Desjardins ◽  
F. Schiettekatte
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Self Assembled

Electronic properties of self-assembled quantum dots of sodium on Cu(111) and their interaction with water

2007 ◽  
Vol 601 (13) ◽  
pp. 2656-2659 ◽  
Author(s):  
A. Politano ◽  
R.G. Agostino ◽  
E. Colavita ◽  
V. Formoso ◽  
G. Chiarello
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Self Assembled

Electronic Properties and Mid-Infrared Transitions in Self-Assembled Quantum Dots

2021 ◽  
pp. 607-632
Author(s):  
Jean-Pierre Leburton ◽  
Leornado R. C. Fonseca ◽  
John Shumway ◽  
David Ceperley ◽  
Richard M. Martin
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Mid Infrared ◽  
Self Assembled

Three-dimensional electronic properties of multiple vertically stacked InAs∕GaAs self-assembled quantum dots

2006 ◽  
Vol 100 (6) ◽  
pp. 063716 ◽  
Author(s):  
J. H. Kim ◽  
J. T. Woo ◽  
T. W. Kim ◽  
K. H. Yoo ◽  
Y. T. Lee
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Three Dimensional ◽  
Self Assembled

scholarly journals Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

2012 ◽  
Vol 86 (3) ◽  
Author(s):  
T. Nowozin ◽  
A. Marent ◽  
L. Bonato ◽  
A. Schliwa ◽  
D. Bimberg ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
High Purity ◽  
Structural And Electronic Properties ◽  
Self Assembled

Growth and Capacitance Spectroscopy of Self Assembled Quantum Dots

1995 ◽  
Vol 417 ◽  
Author(s):  
G. Medeiros-Ribeiro ◽  
K. H. Schmidt ◽  
D. Leonard ◽  
Y. M. Cheng ◽  
P. M. Petroff
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Cross Section ◽  
Coulomb Blockade ◽  
Island Growth ◽  
Atomic Force ◽  
Transmission Electron ◽  
Single Electronics ◽  
Capacitance Spectroscopy ◽  
Self Assembled

AbstractThe growth of InAs on GaAs self assembled quantum dots and their electronic properties is studied. The limit for coherent island growth is calculated with a simple model and compared to the experimentally observed values. Cross section transmission electron micrography and atomic force micrography are used to investigate this limit. The electronic properties studies involved the use of capacitance spectroscopy to map out the density of states in these structures as well as to probe the temperature dependence of the Coulomb Blockade effect in this system. It was found that Coulomb Blockade could be observed at temperatures in excess of 77K, representing an attractive approach for single electronics operating at high temperatures.

Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip

1999 ◽  
Vol 74 (6) ◽  
pp. 844-846 ◽  
Author(s):  
Ichiro Tanaka ◽  
I. Kamiya ◽  
H. Sakaki ◽  
N. Qureshi ◽  
S. J. Allen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Electronic Properties ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force ◽  
Self Assembled

Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing

2004 ◽  
Vol 84 (17) ◽  
pp. 3382-3384 ◽  
Author(s):  
J. F. Girard ◽  
C. Dion ◽  
P. Desjardins ◽  
C. Nı̀ Allen ◽  
P. J. Poole ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Self Assembled
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