Three-dimensional electronic properties of multiple vertically stacked InAs∕GaAs self-assembled quantum dots

2006 ◽  
Vol 100 (6) ◽  
pp. 063716 ◽  
Author(s):  
J. H. Kim ◽  
J. T. Woo ◽  
T. W. Kim ◽  
K. H. Yoo ◽  
Y. T. Lee
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Three Dimensional ◽  
Self Assembled

Electronic properties of self-assembled quantum dots of sodium on Cu(111) and their interaction with water

2007 ◽  
Vol 601 (13) ◽  
pp. 2656-2659 ◽  
Author(s):  
A. Politano ◽  
R.G. Agostino ◽  
E. Colavita ◽  
V. Formoso ◽  
G. Chiarello
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Self Assembled

Designing spatial correlation of quantum dots: towards self-assembled three-dimensional structures

2007 ◽  
Vol 19 (1) ◽  
pp. 015601 ◽  
Author(s):  
J R R Bortoleto ◽  
J G Zelcovit ◽  
H R Gutiérrez ◽  
J Bettini ◽  
M A Cotta
Keyword(s):  
Quantum Dots ◽  
Spatial Correlation ◽  
Three Dimensional ◽  
Self Assembled

Electronic Properties and Mid-Infrared Transitions in Self-Assembled Quantum Dots

2021 ◽  
pp. 607-632
Author(s):  
Jean-Pierre Leburton ◽  
Leornado R. C. Fonseca ◽  
John Shumway ◽  
David Ceperley ◽  
Richard M. Martin
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Mid Infrared ◽  
Self Assembled

scholarly journals Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

2012 ◽  
Vol 86 (3) ◽  
Author(s):  
T. Nowozin ◽  
A. Marent ◽  
L. Bonato ◽  
A. Schliwa ◽  
D. Bimberg ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
High Purity ◽  
Structural And Electronic Properties ◽  
Self Assembled

Growth and Capacitance Spectroscopy of Self Assembled Quantum Dots

1995 ◽  
Vol 417 ◽  
Author(s):  
G. Medeiros-Ribeiro ◽  
K. H. Schmidt ◽  
D. Leonard ◽  
Y. M. Cheng ◽  
P. M. Petroff
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Cross Section ◽  
Coulomb Blockade ◽  
Island Growth ◽  
Atomic Force ◽  
Transmission Electron ◽  
Single Electronics ◽  
Capacitance Spectroscopy ◽  
Self Assembled

AbstractThe growth of InAs on GaAs self assembled quantum dots and their electronic properties is studied. The limit for coherent island growth is calculated with a simple model and compared to the experimentally observed values. Cross section transmission electron micrography and atomic force micrography are used to investigate this limit. The electronic properties studies involved the use of capacitance spectroscopy to map out the density of states in these structures as well as to probe the temperature dependence of the Coulomb Blockade effect in this system. It was found that Coulomb Blockade could be observed at temperatures in excess of 77K, representing an attractive approach for single electronics operating at high temperatures.

Tuning of the electronic properties of self-assembled InAs∕InP(001) quantum dots using grown-in defect mediated intermixing

2006 ◽  
Vol 89 (13) ◽  
pp. 131905 ◽  
Author(s):  
C. Dion ◽  
P. J. Poole ◽  
S. Raymond ◽  
P. Desjardins ◽  
F. Schiettekatte
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Self Assembled

Size and Piezoelectric Effects on Optical Properties of Self-Assembled InGaAs/GaAs Quantum Dots

2006 ◽  
Author(s):  
M. K. Kuo ◽  
T. R. Lin ◽  
K. B. Hong
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Dot ◽  
Optical Transition ◽  
Energy Levels ◽  
Three Dimensional ◽  
Dinger Equation ◽  
Element Analysis ◽  
Piezoelectric Effects ◽  
Self Assembled

Size effects on optical properties of self-assembled quantum dots are analyzed based on the theories of linear elasticity and of strain-dependent k-p with the aid of finite element analysis. The quantum dot is made of InGaAs with truncated pyramidal shape on GaAs substrate. The three-dimensional steady-state effective-mass Schro¨dinger equation is adopted to find confined energy levels as well as wave functions both for electrons and holes of the quantum-dot nanostructures. Strain-induced as well as piezoelectric effects are taken into account in the carrier confinement potential of Schro¨dinger equation. The optical transition energies of quantum dots, computed from confined energy levels for electrons and holes, are significantly different for several quantum dots with distinct sizes. It is found that for QDs with the the larger the volume of QD is, the smaller the values of the optical transition energy. Piezoelectric effect, on the other hand, splits the p-like degeneracy for the electron first excited state about 1~7 meV, and leads to anisotropy on the wave function.

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