Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip

1999 ◽  
Vol 74 (6) ◽  
pp. 844-846 ◽  
Author(s):  
Ichiro Tanaka ◽  
I. Kamiya ◽  
H. Sakaki ◽  
N. Qureshi ◽  
S. J. Allen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Electronic Properties ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force ◽  
Self Assembled

Atomic force microscopy of InAs quantum dots on the vicinal surface of a GaAs crystal

2002 ◽  
Vol 28 (2) ◽  
pp. 139-141
Author(s):  
V. P. Evtikhiev ◽  
O. V. Konstantinov ◽  
E. Yu. Kotel’nikov ◽  
A. V. Matveentsev ◽  
A. N. Titkov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Vicinal Surface ◽  
Gaas Crystal ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force

Optical And Structural properties of Vertical Aligned Self-Assembled InAs Quantum Dots Multilayers

2001 ◽  
Vol 676 ◽  
Author(s):  
J. C. González ◽  
M. I. N. da Silva ◽  
W. N. Rodrigues ◽  
F. M. Matinaga ◽  
R. Magalhaes-Paniago ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

ABSTRACTIn this work, we report optical and structural properties of vertical aligned self-assembled InAs quantum dots multilayers. The InAs quantum dots samples were grown by Molecular Beam Epitaxy. Employing Atomic Force Microscopy, Transmission Electron Microscopy, and Gracing Incident X-ray Diffraction we have studied the structural properties of samples with different number of periods of the multiplayer structure, as well as different InAs coverage. The optical properties were studied using Photoluminescence spectroscopy.

Guided Self Assembly of InAs Quantum Dots on a Cleaved Facet

2006 ◽  
Vol 959 ◽  
Author(s):  
Emanuele Uccelli ◽  
Dieter Schuh ◽  
Jochen Bauer ◽  
Max Bichler ◽  
Jonathan J. Finley ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Growth Mechanism ◽  
Self Assembly ◽  
Semiconductor Quantum Dots ◽  
Preferential Growth ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force ◽  
Long Range Ordering

ABSTRACTThe long range ordering of epitaxial semiconductor quantum dots (QDs) has been obtained by combing self assembly with the cleaved edge overgrowth technique. The introduction of nanometer thick AlAs stripes on a (110) oriented GaAs surface avoids the misfit dislocation growth mechanism of InAs on GaAs (110) and drives the formation of array of QDs. Atomic Force Microscopy (AFM) investigations highlight that InAs QDs only nucleate in chain like structure on Al-rich regions. Here, we present experimental results that demonstrate the ability to create ordered QDs lattices and discuss the conditions under which preferential growth of QDs on the AlAs stripes occurs.

Electrical and Optical Characterization of Energy States in Self-Assembled InAs/GaAs Quantum Dots with Size Distribution

2005 ◽  
Vol 277-279 ◽  
pp. 1023-1028
Author(s):  
Sung Ho Hwang ◽  
Jung Il Lee ◽  
Jin Dong Song ◽  
Won Jun Choi ◽  
Il Ki Han ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy State ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Modes ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled ◽  
Gaas Quantum Dot

We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.

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