Control of electron transport related defects in in situ fabricated single wall carbon nanotube devices

2006 ◽  
Vol 89 (13) ◽  
pp. 133124 ◽  
Author(s):  
Zhixian Zhou ◽  
R. Jin ◽  
Gyula Eres ◽  
Alaska Subedi ◽  
D. Mandrus
Keyword(s):  
Carbon Nanotube ◽  
Electron Transport ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Carbon Nanotube Devices

In situ Raman spectro-electrochemistry study of single-wall carbon nanotube mat

2004 ◽  
Vol 13 (4-8) ◽  
pp. 1314-1321 ◽  
Author(s):  
S. Gupta ◽  
M. Hughes ◽  
A.H. Windle ◽  
J. Robertson
Keyword(s):  
Carbon Nanotube ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
In Situ Raman

Electrochemical Tuning of Single-Wall Carbon Nanotube Mat and Investigations on Actuator Mechanism

2004 ◽  
Vol 855 ◽  
Author(s):  
S. Gupta ◽  
M. Hughes ◽  
J. Robertson
Keyword(s):  
Carbon Nanotubes ◽  
Charge Transfer ◽  
Carbon Nanotube ◽  
Bond Length ◽  
Upper Bound ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Electrochemical Tuning

ABSTRACTElectrochemical tuning of single-wall carbon nanotubes has been investigated using in situ Raman spectroscopy. We built a linear actuator from single-wall carbon nanotube mat and studied in several alkali metal (Li, Na, and K) and alkaline earth (Ca) halide solutions. The variation of bonding with electrochemical biasing was monitored using in situ Raman. This is since Raman can detect changes in C-C bond length: the radial breathing mode (RBM) at ∼190 cm−1 varies inversely with the nanotube diameter and the G band at ∼1590 cm−1 varies with the axial bond length. In addition, the intensities of both the modes vary significantly in a nonmonotonic manner pointing at the emptying/depleting or filling of the bonding and anti-bonding states - electrochemical charge injection. We discuss the variation of spectroscopic observables (intensity/frequency) of these modes providing valuable information on the charge transfer dynamics on the single-wall carbon nanotubes mat surface. We found the in-plane compressive strain (∼ -0.25%) and the charge transfer per carbon atom (fc ∼ -0.005) as an upper bound for the electrolytes used i.e. CaCl2. These results can be quantitatively understood in terms of the changes in the energy gaps between the one-dimensional van Hove singularities in the electron density of states arising possibly due to the alterations in the overlap integral of π bonds between the p orbitals of the adjacent carbon atoms. Moreover, the extent of variation of the absolute potential of the Fermi level or alternatively modification of band gap is estimated from modeling Raman intensity to be around 0.1 eV as an upper bound for CaCl2.

scholarly journals Electron Transport in Single-Wall Carbon Nanotube Weak Links in the Fabry-Perot Regime

2006 ◽  
Vol 96 (20) ◽  
Author(s):  
H. I. Jørgensen ◽  
K. Grove-Rasmussen ◽  
T. Novotný ◽  
K. Flensberg ◽  
P. E. Lindelof
Keyword(s):  
Carbon Nanotube ◽  
Electron Transport ◽  
Weak Links ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Fabry Perot

Raman Study of Single Wall Carbon Nanotube Doped by Alkali Metals

2000 ◽  
Vol 633 ◽  
Author(s):  
N. Bendiab ◽  
E. Anglaret ◽  
A. Righi ◽  
J.L. Sauvajol
Keyword(s):  
Carbon Nanotube ◽  
Raman Scattering ◽  
Alkali Metals ◽  
Low Frequency ◽  
The Other ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Alkali Atoms ◽  
Raman Study

AbstractSingle wall carbon nanotube (SWNT) doped by alkali-metals are investigated by Raman scattering. For saturation-doped compounds, the most striking intrinsic features are two low-frequency peaks assigned to modes involving both radial motions of tubes and alkali-atoms vibrations. On the other hand, the evolution of the Raman spectra with doping was studied in-situ. Two different stable phases are identified and associated to distinct organizations of the tubes and of the alkali-atoms.

Effect of ambient pressure on resistance and resistance fluctuations in single-wall carbon nanotube devices

2006 ◽  
Vol 100 (2) ◽  
pp. 024315 ◽  
Author(s):  
A. Vijayaraghavan ◽  
S. Kar ◽  
S. Rumyantsev ◽  
A. Khanna ◽  
C. Soldano ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Ambient Pressure ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Carbon Nanotube Devices ◽  
Resistance Fluctuations
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