Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy

2006 ◽  
Vol 89 (11) ◽  
pp. 112107 ◽  
Author(s):  
Juan A. Jiménez Tejada ◽  
Pablo Lara Bullejos ◽  
Juan A. López Villanueva ◽  
Francisco M. Gómez-Campos ◽  
Salvador Rodríguez-Bolívar ◽  
...  
Keyword(s):  
Recombination Centers ◽  
Transient Spectroscopy ◽  
Capacitance Transient

Determination of the Density of State Distribution of a-Si:H by Isothermal Capacitance Transient Spectroscopy

1981 ◽  
Vol 20 (7) ◽  
pp. L549-L552 ◽  
Author(s):  
Hideyo Okushi ◽  
Yozo Tokumaru ◽  
Satoshi Yamasaki ◽  
Hidetoshi Oheda ◽  
Kazunobu Tanaka
Keyword(s):  
Density Of State ◽  
State Distribution ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Electrical and Optical Properties of Defects by Complementary Spectroscopies

1995 ◽  
Vol 411 ◽  
Author(s):  
A. Castaldini ◽  
A. Cavallini ◽  
P. Fernandez ◽  
B. Fraboni ◽  
J. Piqueras ◽  
...  
Keyword(s):  
Optical Properties ◽  
Comparative Analysis ◽  
Electrical Properties ◽  
Optical Spectroscopy ◽  
Minority Carrier ◽  
Electrical And Optical Properties ◽  
Carrier Trap ◽  
Transient Spectroscopy ◽  
Capacitance Transient

ABSTRACTDeep levels in II-VI compounds were investigated by complementary junction and optical spectroscopy methods to assess the characteristics of the traps as well as the limits and the reliability of the techniques applied. The electrical properties have been investigated by current and capacitance transient spectroscopy, while the optical properties have been studied by cathodoluminescence. A critical and comparative analysis of the results obtained with the various methods allowed the determination of the parameters and the nature (majority or minority carrier trap) of most of the detected levels.

Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs

1990 ◽  
Vol 67 (3) ◽  
pp. 1380-1383 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Suk‐Ki Min ◽  
Sung Ho Choh ◽  
Susumu Namba
Keyword(s):  
Leakage Current ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Evaluation of Sub-Gap States in Amorphous In-Ga-Zn-O Thin Films Treated with Various Process Conditions

2014 ◽  
Vol 1633 ◽  
pp. 55-60 ◽  
Author(s):  
Kazushi Hayashi ◽  
Aya Hino ◽  
Hiroaki Tao ◽  
Yasuyuki Takanashi ◽  
Shinya Morita ◽  
...  
Keyword(s):  
Thin Films ◽  
Peak Position ◽  
Process Conditions ◽  
Charge Densities ◽  
Capacitance Voltage ◽  
Time Regime ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Gap States ◽  
Capacitance Transient

ABSTRACTIn the present study, the sub-gap states of amorphous In-Ga-Zn-O (a-IGZO) thin films treated with various process conditions have been evaluated by means of capacitance-voltage (C-V) characteristics and isothermal capacitance transient spectroscopy (ICTS). It was found that the space-charge densities of the a-IGZO decreased as the oxygen partial pressure was increased during the sputtering of a-IGZO thin films. The ICTS spectra for the 4, 8, and 12 % samples were similar and the peak positions were found to be around 1 × 10-2 s at 180 K. On the other hand, the peak position for the 20 % sample shifted to a longer time regime and was located at around 2 × 10-1 s at 180 K. The total densities of the traps for the 4, 8, and 12 % samples were calculated to be 5−6 × 1016 cm-3, while that for 20 % was one order of magnitude lower than the others. From Thermal desorption spectrometer, it was found that desorption of Zn atoms started at a temperature higher than 300 °C for the 4 % sample, while desorption of Zn was not observed for the 20 % sample. The introduction of the sub-gap states could be attributed to oxygen-rich and/or Zn-deficient defects in the a-IGZO thin films formed during thermal annealing.

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