On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy

1982 ◽  
Vol 53 (3) ◽  
pp. 1809-1811 ◽  
Author(s):  
Yasuhito Zohta ◽  
Miyoko Oku Watanabe
Keyword(s):  
Thin Films ◽  
Spatial Distribution ◽  
Deep Centers ◽  
Transient Spectroscopy ◽  
Semiconducting Thin Films ◽  
Capacitance Transient

Evaluation of Sub-Gap States in Amorphous In-Ga-Zn-O Thin Films Treated with Various Process Conditions

2014 ◽  
Vol 1633 ◽  
pp. 55-60 ◽  
Author(s):  
Kazushi Hayashi ◽  
Aya Hino ◽  
Hiroaki Tao ◽  
Yasuyuki Takanashi ◽  
Shinya Morita ◽  
...  
Keyword(s):  
Thin Films ◽  
Peak Position ◽  
Process Conditions ◽  
Charge Densities ◽  
Capacitance Voltage ◽  
Time Regime ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Gap States ◽  
Capacitance Transient

ABSTRACTIn the present study, the sub-gap states of amorphous In-Ga-Zn-O (a-IGZO) thin films treated with various process conditions have been evaluated by means of capacitance-voltage (C-V) characteristics and isothermal capacitance transient spectroscopy (ICTS). It was found that the space-charge densities of the a-IGZO decreased as the oxygen partial pressure was increased during the sputtering of a-IGZO thin films. The ICTS spectra for the 4, 8, and 12 % samples were similar and the peak positions were found to be around 1 × 10-2 s at 180 K. On the other hand, the peak position for the 20 % sample shifted to a longer time regime and was located at around 2 × 10-1 s at 180 K. The total densities of the traps for the 4, 8, and 12 % samples were calculated to be 5−6 × 1016 cm-3, while that for 20 % was one order of magnitude lower than the others. From Thermal desorption spectrometer, it was found that desorption of Zn atoms started at a temperature higher than 300 °C for the 4 % sample, while desorption of Zn was not observed for the 20 % sample. The introduction of the sub-gap states could be attributed to oxygen-rich and/or Zn-deficient defects in the a-IGZO thin films formed during thermal annealing.

Determination of the Density of State Distribution of a-Si:H by Isothermal Capacitance Transient Spectroscopy

1981 ◽  
Vol 20 (7) ◽  
pp. L549-L552 ◽  
Author(s):  
Hideyo Okushi ◽  
Yozo Tokumaru ◽  
Satoshi Yamasaki ◽  
Hidetoshi Oheda ◽  
Kazunobu Tanaka
Keyword(s):  
Density Of State ◽  
State Distribution ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Nanoscale Analysis of Defects in Semiconductors and Dielectrics by Means of Charge-transient Spectroscopy/microscopy

2007 ◽  
Vol 1025 ◽  
Author(s):  
Štefan Lányi ◽  
Vojtech Nádaždy ◽  
Miloslav Hruškovic ◽  
Ján Hribik
Keyword(s):  
Thin Films ◽  
Optimal Shape ◽  
Defect Concentration ◽  
Transient Current ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Micrometer Scale ◽  
Defects In Semiconductors ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractWe discuss the possibilities of analysis of electrically active defects in semiconductors and dielectrics by means of Isothermal Capacitance-Transient Spectroscopy and Isothermal Charge-Transient Spectroscopy, applied on sub-micrometer scale. While the first of them utilizes the relaxation of the depletion layer, caused by emission of trapped charges and requires sufficient conductivity, the second directly integrates the transient current and can be applied also to low-conductivity materials like dielectrics.We present some results obtained on pentacene thin films. By means of our charge-transient spectrometer we have achieved a resolution of hundreds of electrons but we believe it can be further improved approximately by one order of magnitude. In materials with relatively high defect concentration, using optimal shape of the probe, a resolution on the order of tens of manometers can be achieved. At low defect concentrations, e.g. in device quality silicon, a resolution on the hundred-nm level is expected.

Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy

2006 ◽  
Vol 89 (11) ◽  
pp. 112107 ◽  
Author(s):  
Juan A. Jiménez Tejada ◽  
Pablo Lara Bullejos ◽  
Juan A. López Villanueva ◽  
Francisco M. Gómez-Campos ◽  
Salvador Rodríguez-Bolívar ◽  
...  
Keyword(s):  
Recombination Centers ◽  
Transient Spectroscopy ◽  
Capacitance Transient

Electrical and Optical Properties of Defects by Complementary Spectroscopies

1995 ◽  
Vol 411 ◽  
Author(s):  
A. Castaldini ◽  
A. Cavallini ◽  
P. Fernandez ◽  
B. Fraboni ◽  
J. Piqueras ◽  
...  
Keyword(s):  
Optical Properties ◽  
Comparative Analysis ◽  
Electrical Properties ◽  
Optical Spectroscopy ◽  
Minority Carrier ◽  
Electrical And Optical Properties ◽  
Carrier Trap ◽  
Transient Spectroscopy ◽  
Capacitance Transient

ABSTRACTDeep levels in II-VI compounds were investigated by complementary junction and optical spectroscopy methods to assess the characteristics of the traps as well as the limits and the reliability of the techniques applied. The electrical properties have been investigated by current and capacitance transient spectroscopy, while the optical properties have been studied by cathodoluminescence. A critical and comparative analysis of the results obtained with the various methods allowed the determination of the parameters and the nature (majority or minority carrier trap) of most of the detected levels.

DETERMINATION OF THE EQUIVALENT ANISOTROPY PROPERTIES OF POLYCRYSTALLINE MAGNETIC MATERIALS: THEORETICAL ASPECTS AND NUMERICAL ANALYSIS

2013 ◽  
Vol 23 (07) ◽  
pp. 1217-1233 ◽  
Author(s):  
ORIANO BOTTAUSCIO ◽  
VALERIA CHIADÒ PIAT ◽  
MICHELA ELEUTERI ◽  
LUCA LUSSARDI ◽  
ALESSANDRA MANZIN
Keyword(s):  
Thin Films ◽  
Spatial Distribution ◽  
Numerical Analysis ◽  
Magnetic Materials ◽  
Hysteresis Loops ◽  
Magnetic Thin Films ◽  
Energy Functional ◽  
Γ Convergence ◽  
Anisotropic Contribution

The aim of this paper is the determination of the equivalent anisotropy properties of polycrystalline magnetic materials, modeled as an assembly of monocrystalline grains with a stochastic spatial distribution of easy axes. The theory of Γ-convergence is here adopted to homogenize the anisotropic contribution in the energy functional and derive the equivalent anisotropy properties. The reliability of this approach is investigated focusing on the computation of the static hysteresis loops of polycrystalline magnetic thin films, starting from the numerical integration of the Landau–Lifshitz–Gilbert equation.

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