Formation of p-type MgZnO by nitrogen doping

2006 ◽  
Vol 89 (10) ◽  
pp. 102104 ◽  
Author(s):  
Z. P. Wei ◽  
B. Yao ◽  
Z. Z. Zhang ◽  
Y. M. Lu ◽  
D. Z. Shen ◽  
...  
Keyword(s):  
Nitrogen Doping ◽  
P Type

Atomic nitrogen doping and p-type conduction in SnO2

2009 ◽  
Vol 95 (22) ◽  
pp. 222112 ◽  
Author(s):  
S. S. Pan ◽  
G. H. Li ◽  
L. B. Wang ◽  
Y. D. Shen ◽  
Y. Wang ◽  
...  
Keyword(s):  
Nitrogen Doping ◽  
Atomic Nitrogen ◽  
P Type ◽  
Type Conduction

Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

2010 ◽  
Vol 114 (17) ◽  
pp. 7980-7985 ◽  
Author(s):  
Shanying Li ◽  
Yang Jiang ◽  
Di Wu ◽  
Li Wang ◽  
Honghai Zhong ◽  
...  
Keyword(s):  
Nitrogen Doping ◽  
Type Conductivity ◽  
P Type

Optical bandgap widening of p-type Cu2O films by nitrogen doping

2009 ◽  
Vol 94 (2) ◽  
pp. 022111 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Shu Saeki ◽  
Takeshi Morikawa
Keyword(s):  
Nitrogen Doping ◽  
Optical Bandgap ◽  
Cu2o Films ◽  
P Type

Donor–acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 122-123 ◽  
pp. 368-370 ◽  
Author(s):  
S.J. Jiao ◽  
Y.M. Lu ◽  
D.Z. Shen ◽  
Z.Z. Zhang ◽  
B.H. Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Doping ◽  
Molecular Beam ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type

scholarly journals Nitrogen-Doped Cu2O Thin Films for Photovoltaic Applications

Materials ◽  
2019 ◽  
Vol 12 (18) ◽  
pp. 3038 ◽  
Author(s):  
Ørnulf Nordseth ◽  
Raj Kumar ◽  
Kristin Bergum ◽  
Irinela Chilibon ◽  
Sean Erik Foss ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Nitrogen Doping ◽  
Hole Concentration ◽  
Nitrogen Concentration ◽  
Conductivity Enhancement ◽  
Nitrogen Doped ◽  
Photovoltaic Applications ◽  
Cu2o Thin Films ◽  
P Type

Cuprous oxide (Cu2O) is a p-type semiconductor with high optical absorption and a direct bandgap of about 2.1 eV, making it an attractive material for photovoltaic applications. For a high-performance photovoltaic device, the formation of low-resistivity contacts on Cu2O thin films is a prerequisite, which can be achieved by, for instance, nitrogen doping of Cu2O in order to increase the carrier concentration. In this work, nitrogen-doped p-type Cu2O thin films were prepared on quartz substrates by magnetron sputter deposition. By adding N2 gas during the deposition process, a nitrogen concentration of up to 2.3 × 1021 atoms/cm3 in the Cu2O thin films was achieved, as determined from secondary ion mass spectroscopy measurements. The effect of nitrogen doping on the structural, optical, and electrical properties of the Cu2O thin films was investigated. X-ray diffraction measurements suggest a preservation of the Cu2O phase for the nitrogen doped thin films, whereas spectrophotometric measurements show that the optical properties were not significantly altered by incorporation of nitrogen into the Cu2O matrix. A significant conductivity enhancement was achieved for the nitrogen-doped Cu2O thin films, based on Hall effect measurements, i.e., the hole concentration was increased from 4 × 1015 to 3 × 1019 cm−3 and the resistivity was reduced from 190 to 1.9 Ω⋅cm by adding nitrogen to the Cu2O thin films.

Plasma assisted nitrogen doping of ZnSe grown by MOVPE

1994 ◽  
Vol 340 ◽  
Author(s):  
T. Cloitre ◽  
O. Briot ◽  
N. Briot ◽  
B. Gil ◽  
R.L. Aulombard
Keyword(s):  
Nitrogen Doping ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Active Species ◽  
Vapour Phase Epitaxy ◽  
Carrier Gas ◽  
Metal Organic ◽  
Organic Vapour ◽  
Carrier Gases ◽  
P Type

ABSTRACTWe designed a plasma cell for nitrogen doping of ZnSe, using a metal organic vapour phase epitaxy (MOVPE) horizontal reactor. With the following growth conditions: Tg=300°C, P=1 Torr and a molar VI/II ratio of 5, successful p-type doping was obtained, as assessed by photoluminescence experiments, but with a free carrier concentration still too low to be detected by transport measurements. The passivation of nitrogen active species by hydrogen is discussed. The possible interaction with the carrier gas has been studied through the use of H2, N2 and He as carrier gases. We demonstrate that the use of helium as carrier gas leads to sensible improvement of the photoluminescence features related to nitrogen acceptor. On the other hand, the use of N2 as carrier gas leads to poor homogeneity of the layers with few effects on the doping level.

Influence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping Densities

2015 ◽  
Vol 821-823 ◽  
pp. 456-459 ◽  
Author(s):  
Takuma Kobayashi ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Rate ◽  
Nitrogen Doping ◽  
Oxide Thickness ◽  
Doping Density ◽  
Aluminum Doping ◽  
Conduction Type ◽  
P Type

It was discovered that the oxidation rate for SiC depended on the conduction type. The oxidation was performed for SiC(0001) with nitrogen doping (n-type) in the range from 2×1016cm-3to 1×1019cm-3, and aluminum doping (p-type) in the range from 2×1015cm-3to 1×1019cm-3, exhibiting a clear dependence. For n-type SiC the oxide thickness increases for higher doping density, and for p-type the thickness decreases. Note that in the case of Si oxidation, there exists very little difference of oxidation rate between the conduction types in such low doping density, and the dependence is peculiar to SiC.

P-Type Conversion of Nitrogen Doped ZnSe Films Grown By Mocvd

1991 ◽  
Vol 222 ◽  
Author(s):  
Babar A. Khan ◽  
Nikhil Taskar ◽  
Donald Dorman ◽  
Khalid Shahzad
Keyword(s):  
Nitrogen Doping ◽  
Exciton Peak ◽  
Type Conversion ◽  
Acceptor Pair ◽  
Ammonia Gas ◽  
Nitrogen Doped ◽  
Capacitance Voltage ◽  
Low Pressure Mocvd ◽  
Donor Acceptor ◽  
P Type

ABSTRACTWe have obtained p-type zinc selenide films by nitrogen doping combined with a post growth anneal. These films were grown on <100> gallium arsenide substrates using a low-pressure MOCVD process. Ammonia gas was used as the source for nitrogen. The as-grown films were annealed and then studied by photoluminescence (PL) and capacitance-voltage (CV) techniques. The PL data is dominated by the acceptor-bound exciton peak and donor-acceptor pair spectrum associated with the nitrogen acceptor. The C-V data shows that the films are p-type, with the highest measured net acceptor concentration of 3×1016/cm3.

Nitrogen doping and p-type conductivity of ZnO films grown by vapor phase epitaxy

2004 ◽  
Author(s):  
Jean-Francois Rommeluere ◽  
L. Svob ◽  
J. Mimila-Arroyo ◽  
S. A. S. Hassani ◽  
F. Jomard ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Nitrogen Doping ◽  
Vapor Phase Epitaxy ◽  
Zno Films ◽  
Type Conductivity ◽  
P Type
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