Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications

2006 ◽  
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pp. 093115 ◽  
Author(s):  
Sung-Soo Yim ◽  
Moon-Sang Lee ◽  
Ki-Su Kim ◽  
Ki-Bum Kim
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pp. J41 ◽  
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Jun-Young Lee ◽  
Jeong-Eun Kim ◽  
Jin-Ha Hwang ◽  
Jae-Pyoung Ahn ◽  
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...  

RSC Advances ◽  
2019 ◽  
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pp. 17291-17298 ◽  
Author(s):  
Yewon Kim ◽  
Byeol Han ◽  
Yu-Jin Kim ◽  
Jeeyoon Shin ◽  
Seongyoon Kim ◽  
...  

We studied the atomic layer deposition (ALD) and the tellurization of Ge–Sb films to prepare conformal crystalline Ge–Sb–Te (GST) films and to achieve void-free gap filling for emerging phase-change memory applications.


2009 ◽  
Vol 11 (4) ◽  
pp. NA-NA
Author(s):  
Jaakko Niinistö ◽  
Kaupo Kukli ◽  
Mikko Heikkilä ◽  
Mikko Ritala ◽  
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2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 282-290 ◽  
Author(s):  
Hehe Zhang ◽  
Nabeel Aslam ◽  
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2010 ◽  
Vol 13 (6) ◽  
pp. H209 ◽  
Author(s):  
Wontae Cho ◽  
Sun Sook Lee ◽  
Taek-Mo Chung ◽  
Chang Gyoun Kim ◽  
Ki-Seok An ◽  
...  

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