Nonvolatile Memory Effects of NiO Layers Embedded in Al[sub 2]O[sub 3] High-k Dielectrics Using Atomic Layer Deposition

2010 ◽  
Vol 13 (6) ◽  
pp. H209 ◽  
Author(s):  
Wontae Cho ◽  
Sun Sook Lee ◽  
Taek-Mo Chung ◽  
Chang Gyoun Kim ◽  
Ki-Seok An ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Nonvolatile Memory ◽  
Atomic Layer ◽  
Memory Effects ◽  
Layer Deposition ◽  
High K

Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition

2011 ◽  
Vol 14 (7) ◽  
pp. J41 ◽  
Author(s):  
Jun-Young Lee ◽  
Jeong-Eun Kim ◽  
Jin-Ha Hwang ◽  
Jae-Pyoung Ahn ◽  
Byung Kook Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Nonvolatile Memory ◽  
Atomic Layer ◽  
Memory Effects ◽  
Layer Deposition

Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor

2015 ◽  
Vol 15 (1) ◽  
pp. 382-385
Author(s):  
Jun Hee Cho ◽  
Sang-Ick Lee ◽  
Jong Hyun Kim ◽  
Sang Jun Yim ◽  
Hyung Soo Shin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Metal Gate ◽  
Layer Deposition ◽  
High K

scholarly journals Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1085 ◽  
Author(s):  
Kemelbay ◽  
Tikhonov ◽  
Aloni ◽  
Kuykendall
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Ambient Conditions ◽  
Nucleation Layer ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

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